Integrated Systems Laboratory, ETH Zurich , 8092 Zurich, Switzerland.
Nano Lett. 2016 Feb 10;16(2):1022-6. doi: 10.1021/acs.nanolett.5b04071. Epub 2016 Jan 6.
Through advanced electro-thermal simulations we demonstrate that self-heating effects play a significant role in ultrascaled nanowire field-effect transistors, that some crystal orientations are less favorable than others (⟨111⟩ for n-type applications, ⟨100⟩ for p-type ones), and that Ge might outperform Si at this scale. We further establish a relationship between the dissipated power and the electrical mobility and another one between the current reduction induced by self-heating and the phonon thermal conductivity.
通过先进的电热模拟，我们证明自加热效应对超小型纳米线场效应晶体管有重要影响，某些晶体方向不如其他方向有利（n 型应用的 ⟨111⟩，p 型应用的 ⟨100⟩），并且在这个尺度上，锗可能优于硅。我们进一步建立了耗散功率与电迁移率之间的关系，以及自加热引起的电流减少与声子热导率之间的关系。
