Kim Yoonsok, Kim Taeyoung, Kim Eun Kyu
Department of Physics and Research Institute of Natural Science, Hanyang University, Seoul 04763, Korea.
Sensors (Basel). 2020 Dec 21;20(24):7340. doi: 10.3390/s20247340.
Two-dimensional (2D) materials, such as molybdenum disulfide (MoS) of the transition metal dichalcogenides family, are widely investigated because of their outstanding electrical and optical properties. However, not much of the 2D materials research completed to date has covered large-area structures comprised of high-quality heterojunction diodes. We fabricated a large-area n-MoS/p-Si heterojunction structure by sulfurization of MoO film, which is thermally evaporated on p-type silicon substrate. The n-MoS/p-Si structure possessed excellent diode characteristics such as ideality factor of 1.53 and rectification ratio in excess of 10. Photoresponsivity and detectivity of the diode showed up to 475 mA/W and 6.5 × 10 Jones, respectively, in wavelength ranges from visible to near-infrared. The device appeared also the maximum external quantum efficiency of 72%. The rise and decay times of optical transient response were measured about 19.78 ms and 0.99 ms, respectively. These results suggest that the sulfurization process for large-area 2D heterojunction with MoS can be applicable to next-generation electronic and optoelectronic devices.
二维（2D）材料，如过渡金属二硫属化物家族中的二硫化钼（MoS），因其出色的电学和光学性能而受到广泛研究。然而，迄今为止完成的二维材料研究中，涉及由高质量异质结二极管组成的大面积结构的并不多。我们通过对热蒸发在p型硅衬底上的MoO薄膜进行硫化，制备了一种大面积n-MoS/p-Si异质结结构。该n-MoS/p-Si结构具有优异的二极管特性，如理想因子为1.53，整流比超过10。在从可见光到近红外的波长范围内，该二极管的光响应度和探测率分别高达475 mA/W和6.5×10琼斯。该器件还表现出72%的最大外量子效率。光学瞬态响应的上升和衰减时间分别测量为约19.78 ms和0.99 ms。这些结果表明，用于大面积MoS二维异质结的硫化工艺可应用于下一代电子和光电器件。
