Hoang Huy Vo Pham, Bark Chung Wung
Department of Electrical Engineering, Gachon University, Seongnam 13120, Republic of Korea.
Department of Semiconductor Engineering, Gachon University, Seongnam 13120, Republic of Korea.
Nanomaterials (Basel). 2024 Nov 27;14(23):1903. doi: 10.3390/nano14231903.
In this study, in situ piezoelectricity was incorporated into the photoactive region to prepare a self-powered deep-ultraviolet photodetector based on a mixture of polyvinylidene fluoride (PVDF)@GaO and polyethyleneimine (PEI)/carbon quantum dots (CQDs). A ferroelectric composite layer was prepared using β-GaO as a filler, and the β-phase of PVDF was used as the polymer matrix. The strong piezoelectricity of β-PVDF can facilitate the separation and transport of photogenerated carriers in the depletion region and significantly reduce the dark current when the device is biased with an external bias, resulting in a high on/off ratio and high detection capability. The self-powered PD exhibited specific detectivity (D* = 3.5 × 10 Jones), an on/off ratio of 2.7, and a response speed of 0.11/0.33 s. Furthermore, the prepared PD exhibits excellent photoresponse stability under continuous UV light, with the photocurrent retaining 83% of its initial value after about 500 s of irradiation. Our findings suggest a new approach for developing cost-effective UV PDs for optoelectronic applications in related fields.
在本研究中，将原位压电性引入光活性区域，以聚偏氟乙烯（PVDF）@GaO与聚乙烯亚胺（PEI）/碳量子点（CQDs）的混合物为基础制备了一种自供电深紫外光电探测器。使用β-GaO作为填料制备了铁电复合层，并将PVDF的β相用作聚合物基体。β-PVDF的强压电性可促进光生载流子在耗尽区的分离和传输，并在器件施加外部偏压时显著降低暗电流，从而实现高开关比和高探测能力。该自供电光电探测器的比探测率（D* = 3.5×10琼斯）、开关比为2.7，响应速度为0.11/0.33秒。此外，制备的光电探测器在连续紫外光下表现出优异的光响应稳定性，光照约500秒后光电流保持其初始值的83%。我们的研究结果为相关领域光电子应用开发经济高效的紫外光电探测器提供了一种新方法。
