Wilmart Q, Inhofer A, Boukhicha M, Yang W, Rosticher M, Morfin P, Garroum N, Fève G, Berroir J-M, Plaçais B
Laboratoire Pierre Aigrain, Ecole Normale Supérieure-PSL Research University, CNRS, Université Pierre et Marie Curie-Sorbonne Universités, Université Paris Diderot-Sorbonne Paris Cité, 24 rue Lhomond, 75231 Paris Cedex 05, France.
Département de Physique, Ecole Normale Supérieure-PSL Research University, CNRS, Université Pierre et Marie Curie-Sorbonne Universités, Université Paris Diderot-Sorbonne Paris Cité, 24 rue Lhomond, 75231 Paris Cedex 05, France.
Sci Rep. 2016 Feb 16;6:21085. doi: 10.1038/srep21085.
The paradigm of graphene transistors is based on the gate modulation of the channel carrier density by means of a local channel gate. This standard architecture is subject to the scaling limit of the channel length and further restrictions due to access and contact resistances impeding the device performance. We propose a novel design, overcoming these issues by implementing additional local gates underneath the contact region which allow a full control of the Klein barrier taking place at the contact edge. In particular, our work demonstrates the GHz operation of transistors driven by independent contact gates. We benchmark the standard channel and novel contact gating and report for the later dynamical transconductance levels at the state of the art. Our finding may find applications in electronics and optoelectronics whenever there is need to control independently the Fermi level and the electrostatic potential of electronic sources or to get rid of cumbersome local channel gates.
石墨烯晶体管的范式基于通过局部沟道栅极对沟道载流子密度进行栅极调制。这种标准架构受到沟道长度缩放极限的限制，并且由于影响器件性能的接入电阻和接触电阻而受到进一步限制。我们提出了一种新颖的设计，通过在接触区域下方实施额外的局部栅极来克服这些问题，这允许对在接触边缘发生的克莱因势垒进行完全控制。特别是，我们的工作展示了由独立接触栅极驱动的晶体管的GHz操作。我们对标准沟道和新型接触栅控进行了基准测试，并报告了后者在当前技术水平下的动态跨导水平。我们的发现可能会在需要独立控制电子源的费米能级和静电势或摆脱繁琐的局部沟道栅极的任何电子和光电子领域找到应用。
