Mehdipour Shima, Alaei Hojjat Allah, Pilehvariyan Ali Asghar
Department of Physiology, Faculty of Medicine, Isfahan University of Medical Sciences, Isfahan, Iran.
Department of Basic Sciences, Isfahan Payame Noor University, Isfahan, Iran.
Adv Biomed Res. 2015 Nov 30;4:254. doi: 10.4103/2277-9175.170679. eCollection 2015.
The medial prefrontal cortex (mPFC) is a part of brain reward system involved in cognitive functions such as learning and memory. The mPFC receives strong dopaminergic innervations from ventral tegmental area (VTA) that comprises a portion of the mesolimbic dopaminergic system (MLDS), and sends glutamatergic projections to both the VTA and nucleus accumbens (NAc).
In this study, male Wister rats weighing 250-350 g were used. The effect of medial prefrontal cortex (mPFC) electrical stimulation with different current intensities (25, 50,100, and 150 μA) in healthy and addicted rats on passive avoidance memory was studied here.
This study showed that 25 and 150 μA had no effect on improving avoidance memory in rats. Current intensities of 50 and 100 μA differ significantly with 25 and 150 μA. The PL of mPFC contributes to memory processing.
The electrical stimulations of prelimbic with 50 and 100 μA current intensities were improved avoidance memory in addicted rats while learning impairment is caused in healthy rats while the electrical stimulation with these used current intensities.
内侧前额叶皮质(mPFC)是大脑奖赏系统的一部分,参与学习和记忆等认知功能。mPFC接受来自腹侧被盖区(VTA)的强大多巴胺能神经支配,VTA是中脑边缘多巴胺能系统(MLDS)的一部分,并且向VTA和伏隔核(NAc)发送谷氨酸能投射。
在本研究中,使用体重为250 - 350 g的雄性Wister大鼠。研究了在健康大鼠和成瘾大鼠中,不同电流强度(25、50、100和150 μA)的内侧前额叶皮质(mPFC)电刺激对被动回避记忆的影响。
本研究表明,25和150 μA对改善大鼠的回避记忆没有影响。50和100 μA的电流强度与25和150 μA有显著差异。mPFC的前边缘区(PL)有助于记忆处理。
50和100 μA电流强度的前边缘区电刺激改善了成瘾大鼠的回避记忆,而在健康大鼠中,这些电流强度的电刺激导致学习障碍。