用于溶液处理金属氧化物薄膜晶体管的微尺度软图案化。
Microscale Soft Patterning for Solution Processable Metal Oxide Thin Film Transistors.
机构信息
Department of Materials Science and Engineering, Yonsei University , 134 Shinchong-dong, Seoul 120-750, South Korea.
Samsung Display Co. Ltd. , Tangjeong, Chuncheongnam-Do 336-741, South Korea.
出版信息
ACS Appl Mater Interfaces. 2016 Mar 23;8(11):7205-11. doi: 10.1021/acsami.5b10847. Epub 2016 Mar 8.
We introduce a microscale soft pattering (MSP) route utilizing contact printing of chemically inert sub-nanometer thick low molecular weight (LMW) poly(dimethylsiloxane) (PDMS) layers. These PDMS layers serve as a release agent layer between the n-type Ohmic metal and metal oxide semiconductors (MOSs) and provide a layer that protects the MOS from water in the surrounding environment. The feasibility of our MSP route was experimentally demonstrated by fabricating solution processable In2O3, IZO, and IGZO TFTs with aluminum (Al), a typical n-type Ohmic metal. We have demonstrated patterning gaps as small as 13 μm. The TFTs fabricated using MSP showed higher field-effect-mobility and lower hysteresis in comparison with those made using conventional photolithography.
我们介绍了一种微尺度软图案化（MSP）方法，利用化学惰性的亚纳米级低分子量（LMW）聚二甲基硅氧烷（PDMS）层的接触印刷。这些 PDMS 层作为 n 型欧姆金属和金属氧化物半导体（MOS）之间的脱模剂层，并提供了一层保护 MOS 免受周围环境中水的侵害。我们的 MSP 方法的可行性通过使用典型的 n 型欧姆金属铝（Al）制造溶液处理的 In2O3、IZO 和 IGZO TFT 进行了实验证明。我们已经展示了最小可达 13μm 的图案化间隙。与使用传统光刻技术制造的 TFT 相比，使用 MSP 制造的 TFT 具有更高的场效应迁移率和更低的滞后。
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