Paulus Walter, Rothwell John C
Department of Clinical Neurophysiology, University of Göttingen Medical Centre, Germany.
UCL Institute of Neurology, Queen Square, London, WC1N 3BG, UK.
J Physiol. 2016 May 15;594(10):2719-28. doi: 10.1113/JP271452.
Activation of neurons not only changes their membrane potential and firing rate but as a secondary action reduces membrane resistance. This loss of resistance, or increase of conductance, may be of central importance in non-invasive magnetic or electric stimulation of the human brain since electrical fields cause larger changes in transmembrane voltage in resting neurons with low membrane conductances than in active neurons with high conductance. This may explain why both the immediate effects and after-effects of brain stimulation are smaller or even reversed during voluntary activity compared with rest. Membrane conductance is also increased during shunting inhibition, which accompanies the classic GABAA IPSP. This short-circuits nearby EPSPs and is suggested here to contribute to the magnitude and time course of short-interval intracortical inhibition and intracortical facilitation.
神经元的激活不仅会改变其膜电位和放电频率,而且作为一种继发作用还会降低膜电阻。这种电阻的降低或电导的增加,在对人脑进行非侵入性磁刺激或电刺激时可能至关重要,因为与高电导的活跃神经元相比,电场在膜电导较低的静息神经元中会引起更大的跨膜电压变化。这或许可以解释为什么与休息时相比,在自愿活动期间脑刺激的即时效应和后效应会更小甚至相反。在伴随经典GABAA抑制性突触后电位的分流抑制过程中,膜电导也会增加。这会使附近的兴奋性突触后电位短路,在此被认为有助于短间隔皮质内抑制和皮质内易化的幅度和时程。