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通过具有自顺应双极电阻开关的电化学沉积法可控合成镍/氧化铜/镍纳米线

Controlled synthesis of Ni/CuOx/Ni nanowires by electrochemical deposition with self-compliance bipolar resistive switching.

作者信息

Park Kyuhyun, Lee Jang-Sik

机构信息

Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea.

出版信息

Sci Rep. 2016 Mar 15;6:23069. doi: 10.1038/srep23069.

DOI:10.1038/srep23069
PMID:26975330
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4791678/
Abstract

We demonstrate synthesis of Ni/CuOx/Ni nanowires (NWs) by electrochemical deposition on anodized aluminum oxide (AAO) membranes. AAO with pore diameter of ~70 nm and pore length of ~50 μm was used as the template for synthesis of NWs. After deposition of Au as the seed layer, NWs with a structure of Ni/CuOx/Ni were grown with a length of ~12 μm. The lengths of 1(st) Ni, CuOx, and 2(nd) Ni were ~4.5 μm, ~3 μm, and ~4.5 μm, respectively. The Ni/CuOx/Ni device exhibits bipolar resistive switching behavior with self-compliance characteristics. Due to the spatial restriction of the current path in NW the Ni/CuOx/Ni NW devices are thought to exhibit self-compliance behaviour. Ni/CuOx/Ni NWs showed bipolar resistive changes possibly due to conducting filaments that are induced by oxygen vacancies. The reliability of the devices was confirmed by data retention measurement. The NW-based resistive switching memory has applications in highly scalable memory devices and neuromorphic devices.

摘要

我们展示了通过在阳极氧化铝（AAO）膜上进行电化学沉积来合成Ni/CuOx/Ni纳米线（NWs）。孔径约为70nm且孔长约为50μm的AAO被用作合成NWs的模板。在沉积金作为种子层之后，生长出具有Ni/CuOx/Ni结构、长度约为12μm的NWs。第一层Ni、CuOx和第二层Ni的长度分别约为4.5μm、3μm和4.5μm。Ni/CuOx/Ni器件表现出具有自顺应特性的双极电阻开关行为。由于NW中电流路径的空间限制，Ni/CuOx/Ni NW器件被认为表现出自顺应行为。Ni/CuOx/Ni NWs显示出双极电阻变化，这可能是由于氧空位诱导的导电细丝所致。通过数据保持测量证实了器件的可靠性。基于NW的电阻开关存储器在高度可扩展的存储器件和神经形态器件中具有应用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/06c3/4791678/2a09e505569b/srep23069-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/06c3/4791678/b35ac693008d/srep23069-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/06c3/4791678/ebacf9ef612f/srep23069-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/06c3/4791678/e17a5a43de9f/srep23069-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/06c3/4791678/9a2c0fba727c/srep23069-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/06c3/4791678/2a09e505569b/srep23069-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/06c3/4791678/b35ac693008d/srep23069-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/06c3/4791678/ebacf9ef612f/srep23069-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/06c3/4791678/e17a5a43de9f/srep23069-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/06c3/4791678/9a2c0fba727c/srep23069-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/06c3/4791678/2a09e505569b/srep23069-f5.jpg

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