Fra V, Beccaria M, Milano G, Guastella S, Bianco S, Porro S, Laurenti M, Stassi S, Ricciardi C
Department of Applied Science and Technology, Politecnico di Torino, c.so Duca degli Abruzzi 24, I-10129, Torino, Italy.
Nanotechnology. 2020 Sep 11;31(37):374001. doi: 10.1088/1361-6528/ab9920. Epub 2020 Jun 3.
Resistive switching (RS) devices based on self-assembled nanowires (NWs) and nanorods (NRs) represent a fascinating alternative to conventional devices with thin film structure. The high surface-to-volume ratio may indeed provide the possibility of modulating their functionalities through surface effects. However, devices based on NWs usually suffer from low resistive switching performances in terms of operating voltages, endurance and retention capabilities. In this work, we report on the resistive switching behaviour of ZnO NW arrays, grown by hydrothermal synthesis, that exhibit stable, bipolar resistive switching characterized by SET/RESET voltages lower than 3 V, endurance higher than 1100 cycles and resistance state retention of more than 10 s. The physical mechanism underlying these RS performances can be ascribed to nanoionic processes involving the formation/rupture of conductive paths assisted by oxygen-related species in the ZnO active layer. The reported results represent, to the best of our knowledge, the best resistive switching performances observed in ZnO NW arrays in terms of endurance and retention.
基于自组装纳米线（NWs）和纳米棒（NRs）的电阻开关（RS）器件是具有薄膜结构的传统器件的一种引人入胜的替代方案。高表面积与体积比确实可能提供通过表面效应调节其功能的可能性。然而，基于NWs的器件在工作电压、耐久性和保持能力方面通常存在电阻开关性能较低的问题。在这项工作中，我们报道了通过水热合成生长的ZnO NW阵列的电阻开关行为，其表现出稳定的双极电阻开关，其特征在于SET/RESET电压低于3 V，耐久性高于1100次循环，电阻状态保持超过10 s。这些RS性能背后的物理机制可归因于纳米离子过程，该过程涉及在ZnO活性层中由氧相关物种辅助的导电路径的形成/断裂。据我们所知，所报道的结果代表了在耐久性和保持方面在ZnO NW阵列中观察到的最佳电阻开关性能。
