Lai Yunfeng, Qiu Wenbiao, Zeng Zecun, Cheng Shuying, Yu Jinling, Zheng Qiao
School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China.
Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou University, Changzhou 213164, China.
Nanomaterials (Basel). 2016 Jan 13;6(1):16. doi: 10.3390/nano6010016.
ZnO nanowires (NWs) were grown on Si(100) substrates at 975 °C by a vapor-liquid-solid method with ~2 nm and ~4 nm gold thin films as catalysts, followed by an argon plasma treatment for the as-grown ZnO NWs. A single ZnO NW-based memory cell with a Ti/ZnO/Ti structure was then fabricated to investigate the effects of plasma treatment on the resistive switching. The plasma treatment improves the homogeneity and reproducibility of the resistive switching of the ZnO NWs, and it also reduces the switching (set and reset) voltages with less fluctuations, which would be associated with the increased density of oxygen vacancies to facilitate the resistive switching as well as to average out the stochastic movement of individual oxygen vacancies. Additionally, a single ZnO NW-based memory cell with self-rectification could also be obtained, if the inhomogeneous plasma treatment is applied to the two Ti/ZnO contacts. The plasma-induced oxygen vacancy disabling the rectification capability at one of the Ti/ZnO contacts is believed to be responsible for the self-rectification in the memory cell.
采用气-液-固方法，以约2纳米和约4纳米的金薄膜作为催化剂，在975℃下于硅（100）衬底上生长氧化锌纳米线（NWs），随后对生长后的氧化锌纳米线进行氩等离子体处理。接着制备了具有Ti/ZnO/Ti结构的单个基于氧化锌纳米线的存储单元，以研究等离子体处理对电阻开关的影响。等离子体处理提高了氧化锌纳米线电阻开关的均匀性和可重复性，还降低了开关（设置和重置）电压，且波动更小，这可能与氧空位密度增加有关，有助于电阻开关，并使单个氧空位的随机移动平均化。此外，如果对两个Ti/ZnO接触进行不均匀的等离子体处理，还可获得具有自整流功能的单个基于氧化锌纳米线的存储单元。据信，等离子体诱导的氧空位使其中一个Ti/ZnO接触处的整流能力失效，这是存储单元中自整流的原因。
