Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-dong, Nam-gu, Pohang, Gyungbuk, 790-784, Republic of Korea.
Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 689-798, Republic of Korea.
Angew Chem Int Ed Engl. 2016 May 17;55(21):6197-201. doi: 10.1002/anie.201600414. Epub 2016 Apr 13.
We report effective solution-processed chemical p-type doping of graphene using trifluoromethanesulfonic acid (CF3 SO3 H, TFMS), that can provide essential requirements to approach an ideal flexible graphene anode for practical applications: i) high optical transmittance, ii) low sheet resistance (70 % decrease), iii) high work function (0.83 eV increase), iv) smooth surface, and iv) air-stability at the same time. The TFMS-doped graphene formed nearly ohmic contact with a conventional organic hole transporting layer, and a green phosphorescent organic light-emitting diode with the TFMS-doped graphene anode showed lower operating voltage, and higher device efficiencies (104.1 cd A(-1) , 80.7 lm W(-1) ) than those with conventional ITO (84.8 cd A(-1) , 73.8 lm W(-1) ).
我们报告了使用三氟甲烷磺酸(CF3SO3H,TFMS)对石墨烯进行有效溶液处理的化学 p 型掺杂,这可以提供接近理想的柔性石墨烯阳极的基本要求,适用于实际应用:i)高光透过率,ii)低面电阻(降低 70%),iii)高功函数(增加 0.83eV),iv)表面光滑,以及 iv)同时具有空气稳定性。TFMS 掺杂的石墨烯与传统的有机空穴传输层形成了近欧姆接触,并且具有 TFMS 掺杂的石墨烯阳极的绿色磷光有机发光二极管显示出更低的工作电压和更高的器件效率(104.1cdA-1,80.7lmW-1),而不是传统的 ITO(84.8cdA-1,73.8lmW-1)。