一种由 WO3 纳米线在硫蒸气中合成的新型 WS2 纳米线-纳米片杂化材料。

Microelectronics and Materials Physics Laboratories, Department of Electrical Engineering, University of Oulu, P.O. Box 4500, FI-90014 Oulu, Finland.

Department of Applied and Environmental Chemistry, University of Szeged, Rerrich Bela ter 1, H-6720 Szeged, Hungary.

Sci Rep. 2016 May 16;6:25610. doi: 10.1038/srep25610.

In this work, WS2 nanowire-nanoflake hybrids are synthesized by the sulfurization of hydrothermally grown WO3 nanowires. The influence of temperature on the formation of products is optimized to grow WS2 nanowires covered with nanoflakes. Current-voltage and resistance-temperature measurements carried out on random networks of the nanostructures show nonlinear characteristics and negative temperature coefficient of resistance indicating that the hybrids are of semiconducting nature. Bottom gated field effect transistor structures based on random networks of the hybrids show only minor modulation of the channel conductance upon applied gate voltage, which indicates poor electrical transport between the nanowires in the random films. On the other hand, the photo response of channel current holds promise for cost-efficient solution process fabrication of photodetector devices working in the visible spectral range.

在这项工作中，通过水热生长的 WO3 纳米线的硫化反应合成了 WS2 纳米线-纳米片杂化材料。优化了温度条件以生长被纳米片覆盖的 WS2 纳米线。对纳米结构的随机网络进行的电流-电压和电阻-温度测量显示出非线性特征和负电阻温度系数，表明这些杂化材料具有半导体性质。基于随机网络的底栅场效应晶体管结构在施加栅极电压时仅对沟道电导进行微小调制，这表明在随机薄膜中的纳米线之间的电传输较差。另一方面，沟道电流的光响应为在可见光光谱范围内工作的光电探测器器件的低成本溶液加工制造带来了希望。