State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China.
School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, 610054, China.
Nanoscale Res Lett. 2016 Dec;11(1):322. doi: 10.1186/s11671-016-1528-0. Epub 2016 Jul 2.
We use metal-assisted chemical etching (MCE) method to fabricate nanostructured black silicon on the surface of C-Si. The Si-PIN photoelectronic detector based on this type of black silicon shows excellent device performance with a responsivity of 0.57 A/W at 1060 nm. Silicon nanocone arrays can be created using MCE treatment. These modified surfaces show higher light absorptance in the near-infrared range (800 to 2500 nm) compared to that of C-Si with polished surfaces, and the variations in the absorption spectra of the nanostructured black silicon with different etching processes are obtained. The maximum light absorptance increases significantly up to 95 % in the wavelength range of 400 to 2500 nm. Our recent novel results clearly indicate that nanostructured black silicon made by MCE has potential application in near-infrared photoelectronic detectors.
我们使用金属辅助化学蚀刻（MCE）方法在 C-Si 表面制造纳米结构的黑硅。基于这种黑硅的 Si-PIN 光电探测器表现出优异的器件性能，在 1060nm 处的响应率为 0.57A/W。MCE 处理可以制造硅纳米锥阵列。与经过抛光的 C-Si 相比，这些经过修饰的表面在近红外区域（800 至 2500nm）的光吸收率更高，并且获得了具有不同蚀刻工艺的纳米结构黑硅的吸收光谱的变化。在 400 至 2500nm 的波长范围内，最大光吸收率显著增加至 95%。我们最近的新结果清楚地表明，MCE 制造的纳米结构黑硅在近红外光电探测器中有潜在的应用。
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