Li Shibin, Jiang Yadong, Wu Zhiming, Wu Jiang, Ying Zhihua, Wang Zhiming, Li Wei, Salamo Gregory
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China.
Nanoscale Res Lett. 2011 Apr 4;6(1):281. doi: 10.1186/1556-276X-6-281.
In this article, we report that the origins of 1/f noise in pm-Si:H film resistors are inhomogeneity and defective structure. The results obtained are consistent with Hooge's formula, where the noise parameter, αH, is independent of doping ratio. The 1/f noise power spectral density and noise parameter αH are proportional to the squared value of temperature coefficient of resistance (TCR). The resistivity and TCR of pm-Si:H film resistor were obtained through linear current-voltage measurement. The 1/f noise, measured by a custom-built noise spectroscopy system, shows that the power spectral density is a function of both doping ratio and temperature.
在本文中，我们报道了pm-Si:H薄膜电阻器中1/f噪声的起源是不均匀性和缺陷结构。所得结果与胡格公式一致，其中噪声参数αH与掺杂比无关。1/f噪声功率谱密度和噪声参数αH与电阻温度系数（TCR）的平方值成正比。通过线性电流-电压测量获得了pm-Si:H薄膜电阻器的电阻率和TCR。由定制的噪声光谱系统测量的1/f噪声表明，功率谱密度是掺杂比和温度两者的函数。
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