Morab Seema, Sundaram Manickam Minakshi, Pivrikas Almantas
College of Science, Health, Engineering and Education, Murdoch University, Perth, WA 6150, Australia.
Nanomaterials (Basel). 2022 Dec 10;12(24):4414. doi: 10.3390/nano12244414.
The time-dependent charge carrier transport and recombination processes in low-mobility organic semiconductor diodes are obtained through numerical simulations using the finite element method (FEM). The application of a Lorentz force across the diode alters the charge transport process leading to the Hall effect. In this contribution, the Hall effect parameters, such as the Hall voltage and charge carrier concentration with varying magnetic fields, are computed for both Langevin and non-Langevin type recombination processes. The results indicate the charge carrier concentration within the diode for the Langevin system is about seven and fourteen times less while the maximum amount of extracted charge is nearly five and ten times less than that in the non-Langevin system of 0.01 and 0.001, respectively. The Hall voltage values obtained for the steady-state case are similar to the non-Langevin system of ββL=0.01. However, the values obtained for the Langevin and non-Langevin systems of ββL=1 and 0.001 exhibit anomalies. The implications of these findings advance the understanding of the charge transport and Hall effect measurements in organic semiconductors that underpins the device's performance.
通过使用有限元方法（FEM）进行数值模拟，获得了低迁移率有机半导体二极管中随时间变化的电荷载流子传输和复合过程。在二极管上施加洛伦兹力会改变电荷传输过程，从而导致霍尔效应。在本论文中，针对朗之万和非朗之万型复合过程，计算了霍尔效应参数，如随磁场变化的霍尔电压和电荷载流子浓度。结果表明，朗之万系统中二极管内的电荷载流子浓度分别比非朗之万系统中0.01和0.001的情况少约七倍和十四倍，而提取的最大电荷量则分别少近五倍和十倍。稳态情况下获得的霍尔电压值与ββL = 0.01的非朗之万系统相似。然而，ββL = 1和0.001的朗之万和非朗之万系统获得的值呈现异常。这些发现的意义有助于推进对有机半导体中电荷传输和霍尔效应测量的理解，而这是器件性能的基础。
