Illarionov Yury, Lv Yezhu, Wu Yehao, Chai Yajing
Laboratory of 2D Optoelectronics and Nanoelectronics (L2DON), Department of Materials Science and Engineering, Southern University of Science and Technology, 1088 Xueyuan Blvd, Shenzhen 518055, China.
Nanomaterials (Basel). 2024 Jul 23;14(15):1237. doi: 10.3390/nano14151237.
The last decade has seen dramatic progress in research on FETs with 2D channels. Starting from the single devices fabricated using exfoliated flakes in the early 2010s, by the early 2020s, 2D FETs being trialed for mass production and vertical stacking of 2D channels made by leading semiconductor companies. However, the industry is focused solely on transition metal dichalcogenide (TMD) channels coupled with conventional 3D oxide insulators such as AlO and HfO. This has resulted in numerous challenges, such as poor-quality interfaces and reliability limitations due to oxide traps. At the same time, the alternative routes for 2D FETs offered by laboratory (LAB) research have not been appreciated until now, even though the use of the native oxides of 2D channels has recently resulted in the first 2D FinFETs. Considering the research progress achieved in the last decade, from this perspective, we will discuss the main challenges for industry integration of 2D FETs and also suggest possible future steps which could propel these emerging technologies towards market applications.
在过去十年中，二维沟道场效应晶体管（FET）的研究取得了显著进展。从2010年代初使用剥离薄片制造单个器件开始，到2020年代初，二维FET已进入大规模生产试验阶段，领先的半导体公司也开始对二维沟道进行垂直堆叠。然而，该行业目前仅专注于与诸如AlO和HfO等传统三维氧化物绝缘体相结合的过渡金属二硫属化物（TMD）沟道。这导致了诸多挑战，比如由于氧化物陷阱导致的界面质量差和可靠性限制。与此同时，实验室（LAB）研究提供的二维FET替代路线至今尚未得到重视，尽管二维沟道原生氧化物的使用最近催生了首批二维鳍式场效应晶体管（FinFET）。从这一角度出发，考虑到过去十年取得的研究进展，我们将讨论二维FET行业整合面临的主要挑战，并提出未来可能推动这些新兴技术走向市场应用的步骤。
