Fachbereich Physik, Freie Universität Berlin , Arnimallee 14, 14195 Berlin, Germany.
Nano Lett. 2016 Aug 10;16(8):5163-8. doi: 10.1021/acs.nanolett.6b02101. Epub 2016 Jul 29.
Monolayers of transition metal dichalcogenides are interesting materials for optoelectronic devices due to their direct electronic band gaps in the visible spectral range. Here, we grow single layers of MoS2 on Au(111) and find that nanometer-sized patches exhibit an electronic structure similar to their freestanding analogue. We ascribe the electronic decoupling from the Au substrate to the incorporation of vacancy islands underneath the intact MoS2 layer. Excitation of the patches by electrons from the tip of a scanning tunneling microscope leads to luminescence of the MoS2 junction and reflects the one-electron band structure of the quasi-freestanding layer.
过渡金属二卤化物的单层对于光电器件来说是很有趣的材料,因为它们在可见光谱范围内具有直接的电子能带隙。在这里,我们在 Au(111)上生长了 MoS2 的单层,并发现纳米级的斑点具有类似于其自由-standing 类似物的电子结构。我们将与 Au 衬底的电子去耦归因于在完整的 MoS2 层下掺入空位岛。通过扫描隧道显微镜针尖上的电子激发斑点会导致 MoS2 结的发光,并反映出准自由-standing 层的单电子能带结构。