Yang Chenfan, Liu Xuelong, Lv Tiezheng, Zhao Lili, Cui Can, Wang Yuying, Cha Limei
College of Materials Science and Engineering, Hunan University, Changsha, 410012 Hunan China.
Department of Applied Chemistry, Harbin Institute of Technology, Harbin, 150001 China.
Springerplus. 2016 Sep 13;5(1):1531. doi: 10.1186/s40064-016-3223-0. eCollection 2016.
Here we synthesized a novel Ag/Si composite sub-micro particle using galvanic displacement by capitalizing on the active chemical surface of Si particles sludge from wafer-slicing process. Si works as chemical reactant, as well as reaction site to form composite particles. Sequent structural characterizations and analysis which include X-ray diffraction, transmission electron microscopy, scanning electron microscope, energy dispersive X-ray and electrical properties of this composite particle were done. A well-proved hetero-epitaxial growth mechanism could explain Ag nano-island/layer with a satisfactory bond property deposited on the Si surface. Since these Si are mechanically cleaved from crystal, formed conductive Ag/Si composites retain the flake shape from Si sludge particles, and narrow size distribution. They are preferred as conductive fillers, an Ag/Si composite-based conductive ink was prepared, its conductance was tested through screen printing, film thickness and resistivity were measured. The resistivity reached the µΩ cm level, even without optimizing the ink formulation. Our methods not only convert this Si sludge into highly conductive composite particles as filler for applications, but also considerably reduce the consumption of precious metal.
在此，我们利用晶圆切割过程中硅颗粒污泥的活性化学表面，通过电化置换合成了一种新型的银/硅复合亚微米颗粒。硅既是化学反应物，也是形成复合颗粒的反应位点。对该复合颗粒进行了后续的结构表征和分析，包括X射线衍射、透射电子显微镜、扫描电子显微镜、能量色散X射线分析以及电学性质分析。一种经过充分验证的异质外延生长机制可以解释在硅表面沉积的具有良好键合性能的银纳米岛/层。由于这些硅是从晶体上机械切割下来的，形成的导电银/硅复合材料保留了硅污泥颗粒的片状形状，且尺寸分布狭窄。它们作为导电填料具有优势，制备了一种基于银/硅复合材料的导电油墨，并通过丝网印刷测试了其导电性，测量了膜厚和电阻率。即使没有优化油墨配方，电阻率也达到了微欧厘米级别。我们的方法不仅将这种硅污泥转化为用于应用的高导电复合颗粒填料，还大大减少了贵金属的消耗。
