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基于电解质-绝缘体-半导体结构中GdO x 膜的pH检测及无酶过氧化氢传感机制

Detection of pH and Enzyme-Free H2O2 Sensing Mechanism by Using GdO x Membrane in Electrolyte-Insulator-Semiconductor Structure.

作者信息

Kumar Pankaj, Maikap Siddheswar, Qiu Jian-Tai, Jana Surajit, Roy Anisha, Singh Kanishk, Cheng Hsin-Ming, Chang Mu-Tung, Mahapatra Rajat, Chiu Hsien-Chin, Yang Jer-Ren

机构信息

Department of Electronic Engineering, Chang Gung University (CGU), 259 Wen-Hwa 1st Rd., Kwei-Shan, Tao-Yuan, 333, Taiwan.

Bio-Sensor Lab., Biomedical Engineering Research Center, Department of Electronic Engineering, Chang Gung University, Tao-Yuan, 333, Taiwan.

出版信息

Nanoscale Res Lett. 2016 Dec;11(1):434. doi: 10.1186/s11671-016-1657-5. Epub 2016 Sep 29.

DOI:10.1186/s11671-016-1657-5
PMID:27680740
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5040652/
Abstract

A 15-nm-thick GdO x membrane in an electrolyte-insulator-semiconductor (EIS) structure shows a higher pH sensitivity of 54.2 mV/pH and enzyme-free hydrogen peroxide (H2O2) detection than those of the bare SiO2 and 3-nm-thick GdO x membranes for the first time. Polycrystalline grain and higher Gd content of the thicker GdO x films are confirmed by transmission electron microscopy (TEM) and X-ray photo-electron spectroscopy (XPS), respectively. In a thicker GdO x membrane, polycrystalline grain has lower energy gap and Gd(2+) oxidation states lead to change Gd(3+) states in the presence of H2O2, which are confirmed by electron energy loss spectroscopy (EELS). The oxidation/reduction (redox) properties of thicker GdO x membrane with higher Gd content are responsible for detecting H2O2 whereas both bare SiO2 and thinner GdO x membranes do not show sensing. A low detection limit of 1 μM is obtained due to strong catalytic activity of Gd. The reference voltage shift increases with increase of the H2O2 concentration from 1 to 200 μM owing to more generation of Gd(3+) ions, and the H2O2 sensing mechanism has been explained as well.

摘要

在电解质-绝缘体-半导体(EIS)结构中,15纳米厚的氧化钆(GdOx)薄膜首次展现出比裸露的二氧化硅(SiO2)薄膜以及3纳米厚的GdOx薄膜更高的pH灵敏度(54.2毫伏/ pH)和无酶过氧化氢(H2O2)检测能力。通过透射电子显微镜(TEM)和X射线光电子能谱(XPS)分别证实了较厚GdOx薄膜的多晶晶粒和更高的钆(Gd)含量。在较厚的GdOx薄膜中,多晶晶粒具有较低的能隙,并且在过氧化氢存在的情况下,Gd(2+)氧化态会转变为Gd(3+)氧化态,这通过电子能量损失谱(EELS)得到证实。具有较高Gd含量的较厚GdOx薄膜的氧化/还原(redox)特性负责检测H2O2,而裸露的SiO2薄膜和较薄的GdOx薄膜均未表现出传感特性。由于Gd的强催化活性,获得了1μM的低检测限。随着H2O2浓度从1μM增加到200μM,参考电压偏移增加,这是由于产生了更多的Gd(3+)离子,同时也对H2O2传感机制进行了解释。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3013/5040652/bbfbcbce35c1/11671_2016_1657_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3013/5040652/02c4f4982907/11671_2016_1657_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3013/5040652/8b5063015bb9/11671_2016_1657_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3013/5040652/adc121ac0e3b/11671_2016_1657_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3013/5040652/46ad62ff2db5/11671_2016_1657_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3013/5040652/bbfbcbce35c1/11671_2016_1657_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3013/5040652/02c4f4982907/11671_2016_1657_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3013/5040652/8b5063015bb9/11671_2016_1657_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3013/5040652/adc121ac0e3b/11671_2016_1657_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3013/5040652/46ad62ff2db5/11671_2016_1657_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3013/5040652/bbfbcbce35c1/11671_2016_1657_Fig5_HTML.jpg

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