基于垂直隧道异质结的铁电驱动石墨烯场效应晶体管性能增强。
Ferroelectric-Driven Performance Enhancement of Graphene Field-Effect Transistors Based on Vertical Tunneling Heterostructures.
机构信息
Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, P. R. China.
The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, 518057, P. R. China.
出版信息
Adv Mater. 2016 Dec;28(45):10048-10054. doi: 10.1002/adma.201601489. Epub 2016 Sep 30.
A vertical graphene heterostructure field-effect transistor (VGHFET) using an ultrathin ferroelectric film as a tunnel barrier is developed. The heterostructure is capable of providing new degrees of tunability and functionality via coupling between the ferroelectricity and the tunnel current of the VGHFET, which results in a high-performance device. The results pave the way for developing novel atomic-scale 2D heterostructures and devices.
采用超薄铁电薄膜作为隧道势垒的垂直石墨烯异质结构场效应晶体管(VGHFET)得以开发。通过铁电和 VGHFET 隧道电流之间的耦合，该异质结构能够提供新的可调谐性和功能性，从而实现高性能器件。这些结果为开发新型原子尺度 2D 异质结构和器件铺平了道路。
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