Woehl Taylor, Keller Robert
Department of Chemical and Biomolecular Engineering, University of Maryland, College Park, MD, United States.
Department of Chemical and Biomolecular Engineering, University of Maryland, College Park, MD, United States; Applied Chemicals and Materials Division, National Institute of Standards and Technology, Boulder, CO, United States.
Ultramicroscopy. 2016 Dec;171:166-176. doi: 10.1016/j.ultramic.2016.08.008. Epub 2016 Aug 6.
An annular dark field (ADF) detector was placed beneath a specimen in a field emission scanning electron microscope operated at 30kV to calibrate detector response to incident beam current, and to create transmission images of gold nanoparticles on silicon nitride (SiN) substrates of various thicknesses. Based on the linear response of the ADF detector diodes to beam current, we developed a method that allowed for direct determination of the percentage of that beam current forward scattered to the ADF detector from the sample, i.e. the transmitted electron (TE) yield. Collection angles for the ADF detector region were defined using a masking aperture above the detector and were systematically varied by changing the sample to detector distance. We found the contrast of the nanoparticles, relative to the SiN substrate, decreased monotonically with decreasing inner exclusion angle and increasing substrate thickness. We also performed Monte Carlo electron scattering simulations, which showed quantitative agreement with experimental contrast associated with the nanoparticles. Together, the experiments and Monte Carlo simulations revealed that the decrease in contrast with decreasing inner exclusion angle was due to a rapid increase in the TE yield of the low atomic number substrate. Nanoparticles imaged at low inner exclusion angles (<150mrad) and on thick substrates (>50nm) showed low image contrast in their centers surrounded by a bright high-contrast halo on their edges. This complex image contrast was predicted by Monte Carlo simulations, which we interpreted in terms of mixing of the nominally bright field (BF) and ADF electron signals. Our systematic investigation of inner exclusion angle and substrate thickness effects on ADF t-SEM imaging provides fundamental understanding of the contrast mechanisms for image formation, which in turn suggest practical limitations and optimal imaging conditions for different substrate thicknesses.
在一台工作电压为30kV的场发射扫描电子显微镜中,将环形暗场(ADF)探测器置于样品下方,以校准探测器对入射束流的响应,并生成不同厚度的氮化硅(SiN)衬底上金纳米颗粒的透射图像。基于ADF探测器二极管对束流的线性响应,我们开发了一种方法,可直接确定从样品向前散射到ADF探测器的束流百分比,即透射电子(TE)产率。ADF探测器区域的收集角通过探测器上方的掩膜孔径来定义,并通过改变样品到探测器的距离进行系统变化。我们发现,相对于SiN衬底,纳米颗粒的对比度随着内排除角的减小和衬底厚度的增加而单调降低。我们还进行了蒙特卡罗电子散射模拟,其结果与纳米颗粒相关的实验对比度显示出定量一致性。实验和蒙特卡罗模拟共同表明,对比度随内排除角减小而降低是由于低原子序数衬底的TE产率迅速增加。在低内排除角(<150mrad)和厚衬底(>50nm)上成像的纳米颗粒,其中心的图像对比度较低,边缘则被明亮的高对比度光晕包围。这种复杂的图像对比度由蒙特卡罗模拟预测,我们根据名义明场(BF)和ADF电子信号的混合来解释。我们对内排除角和衬底厚度对ADF扫描透射电子显微镜成像影响的系统研究,为图像形成的对比度机制提供了基本理解,进而为不同衬底厚度提出了实际限制和最佳成像条件。