Research Center for Organic Electronics (ROEL), Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510, Japan.
Functional Polymers Research Laboratory, Tosoh Corporation, 1-8, Kasumi, Yokkaichi, Mie 510-8540, Japan.
Sci Rep. 2016 Oct 4;6:34723. doi: 10.1038/srep34723.
Printed organic thin-film transistors (OTFTs) are well suited for low-cost electronic applications, such as radio frequency identification (RFID) tags and sensors. Achieving both high carrier mobility and uniform electrical characteristics in printed OTFT devices is essential in these applications. Here, we report on printed high-performance OTFTs and circuits using silver nanoparticle inks for the source/drain electrodes and a blend of dithieno[2,3-d;2',3'-d']benzo[1,2-b;4,5-b']dithiophene (DTBDT-C) and polystyrene for the organic semiconducting layer. A high saturation region mobility of 1.0 cm V s at low operation voltage of -5 V was obtained for relatively short channel lengths of 9 μm. All fifteen of the printed pseudo-CMOS inverter circuits were formed on a common substrate and operated at low operation voltage of 2 V with the total variation in threshold voltage of 0.35 V. Consequently, the printed OTFT devices can be used in more complex integrated circuit applications requiring low manufacturing cost over large areas.
印刷有机薄膜晶体管（OTFT）非常适合低成本的电子应用，例如射频识别（RFID）标签和传感器。在这些应用中，实现印刷 OTFT 器件的高载流子迁移率和均匀的电特性至关重要。在这里，我们报告了使用银纳米粒子油墨作为源/漏电极以及二噻吩并[2,3-d;2',3'-d']苯并[1,2-b;4,5-b']二噻吩（DTBDT-C）和聚苯乙烯的混合物作为有机半导体层的印刷高性能 OTFT 和电路。对于相对较短的 9μm 沟道长度，在-5V 的低工作电压下获得了 1.0cmV s 的高饱和区迁移率。在 2V 的低工作电压下，15 个印刷伪 CMOS 逆变器电路全部在一个公共衬底上形成，并且阈值电压的总变化为 0.35V。因此，印刷 OTFT 器件可用于需要在大面积上具有低成本制造的更复杂集成电路应用。
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