Research Center for Organic Electronics (ROEL), Graduate School of Science and Engineering, Yamagata University, 4-3-16, Jonan, Yonezawa, Yamagata, 992-8510, Japan.
Innovation Center for Organic Electronics (INOEL), Graduate School of Science and Engineering, Yamagata University, 1-808-48, Arcadia, Yonezawa, Yamagata, 992-0119, Japan.
Sci Rep. 2014 Feb 4;4:3947. doi: 10.1038/srep03947.
Printing fully solution-processed organic electronic devices may potentially revolutionize production of flexible electronics for various applications. However, difficulties in forming thin, flat, uniform films through printing techniques have been responsible for poor device performance and low yields. Here, we report on fully solution-processed organic thin-film transistor (TFT) arrays with greatly improved performance and yields, achieved by layering solution-processable materials such as silver nanoparticle inks, organic semiconductors, and insulating polymers on thin plastic films. A treatment layer improves carrier injection between the source/drain electrodes and the semiconducting layer and dramatically reduces contact resistance. Furthermore, an organic semiconductor with large-crystal grains results in TFT devices with shorter channel lengths and higher field-effect mobilities. We obtained mobilities of over 1.2 cm(2) V(-1) s(-1) in TFT devices with channel lengths shorter than 20 μm. By combining these fabrication techniques, we built highly uniform organic TFT arrays with average mobility levels as high as 0.80 cm(2) V(-1) s(-1) and ideal threshold voltages of 0 V. These results represent major progress in the fabrication of fully solution-processed organic TFT device arrays.
全溶液处理工艺的有机电子器件的打印技术可能会彻底改变各种应用的柔性电子生产。然而,通过打印技术形成薄、平、均匀的薄膜的困难导致了较差的器件性能和低产量。在这里,我们报告了通过在薄塑料薄膜上分层溶液处理的材料(如银纳米粒子油墨、有机半导体和绝缘聚合物),得到了性能和产量都得到极大提高的全溶液处理有机薄膜晶体管(TFT)阵列。处理层改善了源/漏电极和半导体层之间的载流子注入,并显著降低了接触电阻。此外,具有大晶粒的有机半导体导致具有较短沟道长度和更高场效应迁移率的 TFT 器件。我们在沟道长度短于 20μm 的 TFT 器件中获得了超过 1.2 cm(2) V(-1) s(-1)的迁移率。通过结合这些制造技术,我们制造了高度均匀的有机 TFT 阵列,平均迁移率高达 0.80 cm(2) V(-1) s(-1),理想的阈值电压为 0 V。这些结果代表了全溶液处理有机 TFT 器件阵列制造方面的重大进展。