Green Strategic Energy Research Institute, Department of Electronic Engineering, ‡Department of Physics and Graphene Research Institute, and §Faculty of Nanotechnology and Advanced Materials Engineering and Graphene Research Institute, Sejong University , 98 Gunja-dong, Gwangjin-gu, Seoul 143-747, Republic of Korea.
ACS Appl Mater Interfaces. 2016 Nov 2;8(43):29383-29390. doi: 10.1021/acsami.6b07064. Epub 2016 Oct 21.
Molybdenum disulfide (MoS) has recently emerged as a promising candidate for fabricating ultrathin-film photovoltaic devices. These devices exhibit excellent photovoltaic performance, superior flexibility, and low production cost. Layered MoS deposited on p-Si establishes a built-in electric field at MoS/Si interface that helps in photogenerated carrier separation for photovoltaic operation. We propose an AlO-based passivation at the MoS surface to improve the photovoltaic performance of bulklike MoS/Si solar cells. Interestingly, it was observed that AlO passivation enhances the built-in field by reduction of interface trap density at surface. Our device exhibits an improved power conversion efficiency (PCE) of 5.6%, which to our knowledge is the highest efficiency among all bulklike MoS-based photovoltaic cells. The demonstrated results hold the promise for integration of bulklike MoS films with Si-based electronics to develop highly efficient photovoltaic cells.
二硫化钼（MoS）最近成为制造超薄薄膜光伏器件的有前途的候选材料。这些器件表现出优异的光伏性能、卓越的柔韧性和低成本。在 p-Si 上沉积的层状 MoS 在 MoS/Si 界面处建立内置电场，有助于光伏操作中光生载流子的分离。我们提出在 MoS 表面采用基于 AlO 的钝化来提高块状 MoS/Si 太阳能电池的光伏性能。有趣的是，观察到 AlO 钝化通过减少表面界面陷阱密度来增强内置电场。我们的器件表现出改进的功率转换效率（PCE）为 5.6%，据我们所知，这是所有块状 MoS 基光伏电池中最高的效率。所展示的结果有望将块状 MoS 薄膜与基于 Si 的电子设备集成，以开发高效的光伏电池。
