Zhao Yipeng, Ouyang Gang
Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), Hunan Normal University, Changsha, 410081, China.
Sci Rep. 2019 Nov 22;9(1):17381. doi: 10.1038/s41598-019-53936-2.
In order to obtain the optimal photoelectric properties of vertical stacked MoS/Si heterostructure solar cells, we propose a theoretical model to address the relationship among film thickness, atomic bond identities and related physical quantities in terms of bond relaxation mechanism and detailed balance principle. We find that the vertical stacked MoS/Si can form type II band alignment, and its photoelectric conversion efficiency (PCE) enhances with increasing MoS thickness. Moreover, the optimal PCE in MoS/Si can reach 24.76%, inferring that a possible design way can be achieved based on the layered transition metal dichalcogenides and silicon.
为了获得垂直堆叠的MoS/Si异质结构太阳能电池的最佳光电性能，我们提出了一个理论模型，从键弛豫机制和详细平衡原理的角度来研究膜厚度、原子键特性和相关物理量之间的关系。我们发现垂直堆叠的MoS/Si可以形成II型能带排列，并且其光电转换效率（PCE）随着MoS厚度的增加而提高。此外，MoS/Si中的最佳PCE可以达到24.76%，这表明基于层状过渡金属二卤化物和硅可以实现一种可行的设计方法。
