Camacho-Aguilera Rodolfo E, Cai Yan, Patel Neil, Bessette Jonathan T, Romagnoli Marco, Kimerling Lionel C, Michel Jurgen
Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
Opt Express. 2012 May 7;20(10):11316-20. doi: 10.1364/OE.20.011316.
Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated. Room temperature multimode laser with 1mW output power is measured. Phosphorous doping in Germanium at a concentration over 4x10cm is achieved. A Germanium gain spectrum of nearly 200nm is observed.
实现了硅基锗pnn异质结二极管结构的电泵浦激光发射。测量了室温下输出功率为1毫瓦的多模激光器。实现了锗中磷掺杂浓度超过4×10¹⁹cm⁻³。观察到近200纳米的锗增益光谱。
