School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Korea.
School of Electrical Engineering, Kookmin University , 77 Jeongneung-ro, Seongbuk-gu, Seoul 02707, Korea.
ACS Nano. 2016 Dec 27;10(12):10894-10900. doi: 10.1021/acsnano.6b05429. Epub 2016 Nov 16.
Three-dimensional (3-D) fin-structured carbon nanotube field-effect transistors (CNT-FETs) with purified 99.9% semiconducting CNTs were demonstrated on a large scale 8 in. silicon wafer. The fabricated 3-D CNT-FETs take advantage of the 3-D geometry and exhibit enhanced electrostatic gate controllability and superior charge transport. A trigated structure surrounding the randomly networked single-walled CNT channel was formed on a fin-like 3-D silicon frame, and as a result, the effective packing density increased to almost 600 CNTs/μm. Additionally, highly sensitive controllability of the threshold voltage (V) was achieved using a thin back gate oxide in the same silicon frame to control power consumption and enhance performance. Our results are expected to broaden the design margin of CNT-based circuit architectures for versatile applications. The proposed 3-D CNT-FETs can potentially provide a desirable alternative to silicon based nanoelectronics and a blueprint for furthering the practical use of emerging low-dimensional materials other than CNTs.
大规模 8 英寸硅片上展示了采用纯化 99.9%半导体 CNT 的三维（3-D）鳍式结构碳纳米管场效应晶体管（CNT-FET）。所制备的 3-D CNT-FET 利用 3-D 几何形状，表现出增强的静电栅极可控性和卓越的电荷输运性能。在鳍状 3-D 硅框架上形成了围绕随机网络单壁 CNT 沟道的三栅结构，从而有效提高了封装密度，达到了近 600 CNT/μm。此外，通过在同一硅框架中使用薄背栅氧化层来控制功率消耗和增强性能，实现了对阈值电压（V）的高度灵敏控制。我们的结果有望拓宽基于 CNT 的电路架构的设计裕度，以实现各种应用。所提出的 3-D CNT-FET 可以作为硅基纳米电子学的理想替代品，并为进一步实用新兴的低维材料（除 CNT 外）提供蓝图。
