高度均匀的碳纳米管场效应晶体管和中规模集成电路。
Highly Uniform Carbon Nanotube Field-Effect Transistors and Medium Scale Integrated Circuits.
机构信息
Key Laboratory for the Physics and Chemistry of Nanodevices and Department of electronics, Peking University , Beijing 100871, China.
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Science , Suzhou, 215123, China.
出版信息
Nano Lett. 2016 Aug 10;16(8):5120-8. doi: 10.1021/acs.nanolett.6b02046. Epub 2016 Jul 29.
Top-gated p-type field-effect transistors (FETs) have been fabricated in batch based on carbon nanotube (CNT) network thin films prepared from CNT solution and present high yield and highly uniform performance with small threshold voltage distribution with standard deviation of 34 mV. According to the property of FETs, various logical and arithmetical gates, shifters, and d-latch circuits were designed and demonstrated with rail-to-rail output. In particular, a 4-bit adder consisting of 140 p-type CNT FETs was demonstrated with higher packing density and lower supply voltage than other published integrated circuits based on CNT films, which indicates that CNT based integrated circuits can reach to medium scale. In addition, a 2-bit multiplier has been realized for the first time. Benefitted from the high uniformity and suitable threshold voltage of CNT FETs, all of the fabricated circuits based on CNT FETs can be driven by a single voltage as small as 2 V.
顶栅型 p 型场效应晶体管 (FET) 已基于 CNT 溶液制备的 CNT 网络薄膜进行批量制造，具有高产量和高度均匀的性能，其阈值电压分布的标准偏差为 34 mV。根据 FET 的特性，设计并展示了各种逻辑和算术门、移位器和 D 型锁存器电路，具有轨到轨输出。特别是，由 140 个 p 型 CNTFET 组成的 4 位加法器具有比其他基于 CNT 薄膜的已发表集成电路更高的封装密度和更低的电源电压，这表明基于 CNT 的集成电路可以达到中等规模。此外，首次实现了 2 位乘法器。得益于 CNTFET 的高均匀性和合适的阈值电压，所有基于 CNTFET 的制造电路都可以由单个低至 2 V 的电压驱动。
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