School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA.
Sci Rep. 2017 Jan 3;7:39793. doi: 10.1038/srep39793.
In the quest for novel, scalable and energy-efficient computing technologies, many non-charge based logic devices are being explored. Recent advances in multi-ferroic materials have paved the way for electric field induced low energy and fast switching of nano-magnets using the magneto-electric (ME) effect. In this paper, we propose a voltage driven logic-device based on the ME induced switching of nano-magnets. We further demonstrate that the proposed logic-device, which exhibits decoupled read and write paths, can be used to construct a complete logic family including XNOR, NAND and NOR gates. The proposed logic family shows good scalability with a quadratic dependence of switching energy with respect to the switching voltage. Further, the proposed logic-device has better robustness against the effect of thermal noise as compared to the conventional current driven switching of nano-magnets. A device-to-circuit level coupled simulation framework, including magnetization dynamics and electron transport model, has been developed for analyzing the present proposal. Using our simulation framework, we present energy and delay results for the proposed Magneto-Electric Spin Logic (MESL) gates.
在寻求新型、可扩展和节能的计算技术的过程中，许多非基于电荷的逻辑器件正在被探索。多铁材料的最新进展为利用磁电（ME）效应通过电场诱导纳米磁体的低能量和快速切换铺平了道路。在本文中，我们提出了一种基于 ME 诱导纳米磁体切换的电压驱动逻辑器件。我们进一步证明，所提出的逻辑器件具有独立的读写路径，可用于构建包括 XNOR、NAND 和 NOR 门在内的完整逻辑系列。所提出的逻辑系列具有良好的可扩展性，其开关能量与开关电压呈二次关系。此外，与传统的纳米磁体电流驱动开关相比，所提出的逻辑器件对热噪声的影响具有更好的鲁棒性。已经开发了一种包括磁化动力学和电子输运模型的器件到电路级耦合仿真框架，用于分析本提案。使用我们的仿真框架，我们提出了用于所提出的磁电自旋逻辑（MESL）门的能量和延迟结果。
