Kovács-Krausz Zoltán, Nagy Dániel, Márffy Albin, Karpiak Bogdan, Tajkov Zoltán, Oroszlány László, Koltai János, Nemes-Incze Péter, Dash Saroj P, Makk Péter, Csonka Szabolcs, Tóvári Endre
Department of Physics, Institute of Physics, Budapest University of Technology and Economics, Budapest, Hungary.
MTA-BME Superconducting Nanoelectronics Momentum Research Group, Budapest, Hungary.
NPJ Quantum Mater. 2024;9(1):76. doi: 10.1038/s41535-024-00679-7. Epub 2024 Oct 5.
The layered van der Waals material ZrTe is known as a candidate topological insulator (TI), however its topological phase and the relation with other properties such as an apparent Dirac semimetallic state is still a subject of debate. We employ a semiclassical multicarrier transport (MCT) model to analyze the magnetotransport of ZrTe nanodevices at hydrostatic pressures up to 2 GPa. The temperature dependence of the MCT results between 10 and 300 K is assessed in the context of thermal activation, and we obtain the positions of conduction and valence band edges in the vicinity of the chemical potential. We find evidence of the closing and re-opening of the band gap with increasing pressure, which is consistent with a phase transition from weak to strong TI. This matches expectations from ab initio band structure calculations, as well as previous observations that CVT-grown ZrTe is a weak TI in ambient conditions.
层状范德华材料ZrTe被认为是一种潜在的拓扑绝缘体(TI),然而其拓扑相以及与其他性质(如明显的狄拉克半金属态)的关系仍然存在争议。我们采用半经典多载流子输运(MCT)模型来分析ZrTe纳米器件在高达2 GPa静水压力下的磁输运。在热激活的背景下评估了MCT结果在10至300 K之间的温度依赖性,并且我们获得了化学势附近导带和价带边缘的位置。我们发现随着压力增加带隙关闭和重新打开的证据,这与从弱拓扑绝缘体到强拓扑绝缘体的相变一致。这与从头算能带结构计算的预期相符,也与之前关于化学气相输运(CVT)生长的ZrTe在环境条件下是弱拓扑绝缘体的观察结果一致。