硅衬底上悬浮的InGaAs/InP量子阱纳米柱中的室温法布里-珀罗共振

Room-temperature Fabry-Perot resonances in suspended InGaAs/InP quantum-well nanopillars on a silicon substrate.

作者信息

Malheiros-Silveira Gilliard N, Bhattacharya Indrasen, Deshpande Saniya V, Skuridina Daria, Lu Fanglu, Chang-Hasnain Connie J

出版信息

Opt Express. 2017 Jan 9;25(1):271-277. doi: 10.1364/OE.25.000271.

DOI:10.1364/OE.25.000271

PMID:28085820

Abstract

We present a new platform based on suspended III-V semiconductor nanopillars for direct integration of optoelectronic devices on a silicon substrate. Nanopillars grown in core-shell mode with InGaAs/InP quantum wells can support long-wavelength Fabry-Pérot resonances at room temperature with this novel configuration. Experimental results are demonstrated at a silicon-transparent wavelength of 1460 nm, facilitating integration with silicon platform.

摘要

我们展示了一种基于悬浮III-V族半导体纳米柱的新平台，用于在硅衬底上直接集成光电器件。采用InGaAs/InP量子阱以核壳模式生长的纳米柱，通过这种新颖的结构在室温下能够支持长波长法布里-珀罗共振。实验结果在1460nm的硅透明波长下得到了验证，便于与硅平台集成。