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使用氮掺杂二氧化钛纳米棒阵列作为电子传输层提高钙钛矿太阳能电池效率

Enhancement of Perovskite Solar Cells Efficiency using N-Doped TiO Nanorod Arrays as Electron Transfer Layer.

作者信息

Zhang Zhen-Long, Li Jun-Feng, Wang Xiao-Li, Qin Jian-Qiang, Shi Wen-Jia, Liu Yue-Feng, Gao Hui-Ping, Mao Yan-Li

机构信息

School of Physics and Electronics, Henan University, Kaifeng, 475004, China.

Institute for Computational Materials Science, Henan University, Kaifeng, 475004, China.

出版信息

Nanoscale Res Lett. 2017 Dec;12(1):43. doi: 10.1186/s11671-016-1811-0. Epub 2017 Jan 17.

Abstract

In this paper, N-doped TiO (N-TiO) nanorod arrays were synthesized with hydrothermal method, and perovskite solar cells were fabricated using them as electron transfer layer. The solar cell performance was optimized by changing the N doping contents. The power conversion efficiency of solar cells based on N-TiO with the N doping content of 1% (N/Ti, atomic ratio) has been achieved 11.1%, which was 14.7% higher than that of solar cells based on un-doped TiO. To get an insight into the improvement, some investigations were performed. The structure was examined with X-ray powder diffraction (XRD), and morphology was examined by scanning electron microscopy (SEM). Energy dispersive spectrometer (EDS) and Tauc plot spectra indicated the incorporation of N in TiO nanorods. Absorption spectra showed higher absorption of visible light for N-TiO than un-doped TiO. The N doping reduced the energy band gap from 3.03 to 2.74 eV. The photoluminescence (PL) and time-resolved photoluminescence (TRPL) spectra displayed the faster electron transfer from perovskite layer to N-TiO than to un-doped TiO. Electrochemical impedance spectroscopy (EIS) showed the smaller resistance of device based on N-TiO than that on un-doped TiO.

摘要

本文采用水热法合成了氮掺杂二氧化钛(N-TiO)纳米棒阵列,并将其用作电子传输层制备了钙钛矿太阳能电池。通过改变氮掺杂含量对太阳能电池性能进行了优化。基于氮掺杂含量为1%(N/Ti,原子比)的N-TiO的太阳能电池的功率转换效率达到了11.1%,比基于未掺杂TiO的太阳能电池高出14.7%。为深入了解这种改进,进行了一些研究。用X射线粉末衍射(XRD)检测结构,用扫描电子显微镜(SEM)检测形貌。能量色散谱仪(EDS)和Tauc图光谱表明氮已掺入TiO纳米棒中。吸收光谱显示N-TiO对可见光的吸收比未掺杂的TiO更高。氮掺杂使能带隙从3.03 eV降低到2.74 eV。光致发光(PL)和时间分辨光致发光(TRPL)光谱显示,与未掺杂的TiO相比,电子从钙钛矿层转移到N-TiO的速度更快。电化学阻抗谱(EIS)显示基于N-TiO的器件电阻比基于未掺杂TiO的器件电阻更小。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0672/5241255/43ad6dbc05af/11671_2016_1811_Fig1_HTML.jpg

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