RIKEN Center for Advanced Photonics, Hirosawa 2-1, Wako, Saitama 351-0198, Japan.
State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P.O. Box 800-211, Shanghai 201800, China.
Sci Rep. 2017 Jan 18;7:40785. doi: 10.1038/srep40785.
Three-dimensional integrated circuits (3D ICs) are an attractive replacement for conventional 2D ICs as high-performance, low-power-consumption, and small-footprint microelectronic devices. However, one of the major remaining challenges is the manufacture of high-aspect-ratio through-silicon vias (TSVs), which is a crucial technology for the assembly of 3D Si ICs. Here, we present the fabrication of high-quality TSVs using a femtosecond (fs) 1.5-μm Bessel beam. To eliminate the severe ablation caused by the sidelobes of a conventional Bessel beam, a fs Bessel beam is tailored using a specially designed binary phase plate. We demonstrate that the tailored fs Bessel beam can be used to fabricate a 2D array of approximately ∅10-μm TSVs on a 100-μm-thick Si substrate without any sidelobe damage, suggesting potential application in the 3D assembly of 3D Si ICs.
三维集成电路（3D IC）是一种有吸引力的替代传统二维集成电路的方案，因为它具有高性能、低功耗和小尺寸的微电子器件的特点。然而，目前仍面临的一个主要挑战是制造高深宽比的硅通孔（TSV），这是三维硅集成电路组装的关键技术。在这里，我们使用飞秒（fs）1.5μm 贝塞尔光束来制造高质量的 TSV。为了消除传统贝塞尔光束旁瓣引起的严重烧蚀，我们使用专门设计的二元相位板对 fs 贝塞尔光束进行了调整。我们证明，调整后的 fs 贝塞尔光束可以用于在 100μm 厚的硅衬底上制造大约∅10μm 的二维 TSV 阵列，而不会有任何旁瓣损坏，这表明它在三维硅集成电路的三维组装中有潜在的应用。
