使用重复单脉冲、兆赫兹和吉赫兹脉冲序列对硅进行飞秒激光冲击钻孔

Femtosecond Laser Percussion Drilling of Silicon Using Repetitive Single Pulse, MHz-, and GHz-Burst Regimes.

作者信息

Balage Pierre, Lafargue Manon, Guilberteau Théo, Bonamis Guillaume, Hönninger Clemens, Lopez John, Manek-Hönninger Inka

机构信息

Université de Bordeaux-CNRS-CEA, CELIA UMR 5107, 33405 Talence, France.

AMPLITUDE, Cité de la Photonique, 33600 Pessac, France.

出版信息

Micromachines (Basel). 2024 May 9;15(5):632. doi: 10.3390/mi15050632.

DOI:10.3390/mi15050632

PMID:38793205

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11123324/

Abstract

In this contribution, we present novel results on top-down drilling in silicon, the most important semiconductor material, focusing specifically on the influence of the laser parameters. We compare the holes obtained with repetitive single pulses, as well as in different MHz- and GHz-burst regimes. The deepest holes were obtained in GHz-burst mode, where we achieved holes of almost 1 mm depth and 35 µm diameter, which corresponds to an aspect ratio of 27, which is higher than the ones reported so far in the literature, to the best of our knowledge. In addition, we study the influence of the energy repartition within the burst in GHz-burst mode.

摘要

在本论文中，我们展示了关于在最重要的半导体材料硅中进行自上而下钻孔的新成果，特别关注激光参数的影响。我们比较了用重复单脉冲以及在不同的兆赫兹和吉赫兹脉冲串模式下获得的孔。最深的孔是在吉赫兹脉冲串模式下获得的，在该模式下我们实现了深度近1毫米、直径35微米的孔，其纵横比为27，据我们所知，这高于迄今为止文献中报道的纵横比。此外，我们研究了吉赫兹脉冲串模式下脉冲串内能量分配的影响。