Suzuki Hiroaki, Akase Zentaro, Niitsu Kodai, Tanigaki Toshiaki, Shindo Daisuke
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan.
Center for Emergent Matter Science (CEMS), RIKEN, Hirosawa 2-1, Wako, Saitama 351-0198, Japan.
Microscopy (Oxf). 2017 Jun 1;66(3):167-171. doi: 10.1093/jmicro/dfw112.
Charging of a SiO2 particle induced by electron illumination was investigated by changing the illuminated area of the particle and its support film through control of the position of the mask plate inserted in a transmission electron microscope illumination system. The electric fields around the charged SiO2 particle were analyzed using electron holography. The amount of charge was evaluated quantitatively by comparing the reconstructed phase images with the simulated phase images. When the support film was not covered against the incident electron beam, secondary electrons emitted from the conductive support film were attracted to the charged particle, resulting in particle discharge. In contrast, when the support film was completely covered, secondary electrons were not emitted from the film, so that the particle remained positively charged.
通过控制插入透射电子显微镜照明系统中的掩模板位置来改变二氧化硅颗粒及其支撑膜的照明面积，研究了电子照明诱导的二氧化硅颗粒充电情况。使用电子全息术分析了带电二氧化硅颗粒周围的电场。通过将重建的相位图像与模拟的相位图像进行比较，定量评估了电荷量。当支撑膜未对入射电子束进行覆盖时，从导电支撑膜发射的二次电子被吸引到带电颗粒上，导致颗粒放电。相反，当支撑膜完全被覆盖时，膜不会发射二次电子，因此颗粒保持带正电状态。
