Ghetmiri Seyed Amir, Zhou Yiyin, Margetis Joe, Al-Kabi Sattar, Dou Wei, Mosleh Aboozar, Du Wei, Kuchuk Andrian, Liu Jifeng, Sun Greg, Soref Richard A, Tolle John, Naseem Hameed A, Li Baohua, Mortazavi Mansour, Yu Shui-Qing
Opt Lett. 2017 Feb 1;42(3):387-390. doi: 10.1364/OL.42.000387.
A SiGeSn/GeSn/SiGeSn single quantum well structure was grown using an industry standard chemical vapor deposition reactor with low-cost commercially available precursors. The material characterization revealed the precisely controlled material growth process. Temperature-dependent photoluminescence spectra were correlated with band structure calculation for a structure accurately determined by high-resolution x-ray diffraction and transmission electron microscopy. Based on the result, a systematic study of SiGeSn and GeSn bandgap energy separation and barrier heights versus material compositions and strain was conducted, leading to a practical design of a type-I direct bandgap quantum well.
采用具有低成本商用前驱体的工业标准化学气相沉积反应器生长了一种SiGeSn/GeSn/SiGeSn单量子阱结构。材料表征揭示了精确控制的材料生长过程。温度相关的光致发光光谱与通过高分辨率X射线衍射和透射电子显微镜精确确定结构的能带结构计算相关联。基于该结果，对SiGeSn和GeSn的带隙能量分离以及势垒高度与材料组成和应变的关系进行了系统研究，从而实现了I型直接带隙量子阱的实际设计。
