von den Driesch Nils, Stange Daniela, Rainko Denis, Povstugar Ivan, Zaumseil Peter, Capellini Giovanni, Schröder Thomas, Denneulin Thibaud, Ikonic Zoran, Hartmann Jean-Michel, Sigg Hans, Mantl Siegfried, Grützmacher Detlev, Buca Dan
Peter Grünberg Institute 9 (PGI-9) and JARA-Fundamentals of Future Information Technologies (JARA-FIT) Forschungszentrum Jülich 52425 Jülich Germany.
Central Institute for Engineering, Electronics and Analytics Forschungszentrum Jülich 52425 Jülich Germany.
Adv Sci (Weinh). 2018 Mar 27;5(6):1700955. doi: 10.1002/advs.201700955. eCollection 2018 Jun.
Growth and characterization of advanced group IV semiconductor materials with CMOS-compatible applications are demonstrated, both in photonics. The investigated GeSn/SiGeSn heterostructures combine direct bandgap GeSn active layers with indirect gap ternary SiGeSn claddings, a design proven its worth already decades ago in the III-V material system. Different types of double heterostructures and multi-quantum wells (MQWs) are epitaxially grown with varying well thicknesses and barriers. The retaining high material quality of those complex structures is probed by advanced characterization methods, such as atom probe tomography and dark-field electron holography to extract composition parameters and strain, used further for band structure calculations. Special emphasis is put on the impact of carrier confinement and quantization effects, evaluated by photoluminescence and validated by theoretical calculations. As shown, particularly MQW heterostructures promise the highest potential for efficient next generation complementary metal-oxide-semiconductor (CMOS)-compatible group IV lasers.
展示了具有CMOS兼容应用的先进IV族半导体材料在光子学方面的生长和特性。所研究的GeSn/SiGeSn异质结构将直接带隙GeSn有源层与间接带隙三元SiGeSn包层相结合，这种设计在几十年前的III-V族材料系统中就已证明其价值。通过外延生长不同类型的双异质结构和多量子阱（MQW），阱厚度和势垒各不相同。利用先进的表征方法，如原子探针断层扫描和暗场电子全息术来探测这些复杂结构所保持的高材料质量，以提取成分参数和应变，并进一步用于能带结构计算。特别强调了载流子限制和量子化效应的影响，通过光致发光进行评估，并通过理论计算进行验证。如图所示，特别是MQW异质结构有望成为高效下一代互补金属氧化物半导体（CMOS）兼容IV族激光器的最大潜力所在。
