Department of Applied Physics, Hebrew University of Jerusalem, Jerusalem, 91904, Israel.
Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem, 91904, Israel.
Adv Mater. 2017 May;29(17). doi: 10.1002/adma.201606748. Epub 2017 Mar 3.
There is an increasing demand for realizing a simple Si based universal memory device working at ambient temperatures. In principle, nonvolatile magnetic memory can operate at low power consumption and high frequencies. However, in order to compete with existing memory technology, size reduction and simplification of the used material systems are essential. In this work, the chiral-induced spin selectivity effect is used along with 30-50 nm ferromagnetic nanoplatelets in order to realize a simple magnetic memory device. The vertical memory is Si compatible, easy to fabricate, and in principle can be scaled down to a single nanoparticle size. Results show clear dual magnetization behavior with threefold enhancement between the one and zero states. The magnetization of the device is accompanied with large avalanche like noise that is ascribed to the redistribution of current densities due to spin accumulation inducing coupling effects between the different nanoplatelets.
人们对于实现工作在环境温度下的简单硅基通用存储器件的需求日益增长。原则上，非易失性磁性存储器可以在低功耗和高频率下工作。然而，为了与现有存储技术竞争，缩小尺寸和简化所用材料体系至关重要。在这项工作中，手性诱导自旋选择效应与 30-50nm 的铁磁纳米板一起被用来实现一个简单的磁性存储器件。垂直存储与硅兼容，易于制造，并且原则上可以缩小到单个纳米颗粒尺寸。结果表明，器件具有明显的双磁化行为，在一态和零态之间有三倍的增强。器件的磁化伴随着类似于雪崩的大噪声，这归因于由于自旋积累引起的电流密度再分配，从而导致不同纳米板之间的耦合效应。
