Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), 08193, Bellaterra, Spain.
Unitè Mixte de Physique, CNRS-Thales, Palaiseau, 91767, France.
Sci Rep. 2018 Jan 16;8(1):861. doi: 10.1038/s41598-017-19129-5.
Multiple spin functionalities are probed on Pt/LaCoMnO/Nb:SrTiO, a device composed by a ferromagnetic insulating barrier sandwiched between non-magnetic electrodes. Uniquely, LaCoMnO thin films present strong perpendicular magnetic anisotropy of magnetocrystalline origin, property of major interest for spintronics. The junction has an estimated spin-filtering efficiency of 99.7% and tunneling anisotropic magnetoresistance (TAMR) values up to 30% at low temperatures. This remarkable angular dependence of the magnetoresistance is associated with the magnetic anisotropy whose origin lies in the large spin-orbit interaction of Co which is additionally tuned by the strain of the crystal lattice. Furthermore, we found that the junction can operate as an electrically readable magnetic memory device. The findings of this work demonstrate that a single ferromagnetic insulating barrier with strong magnetocrystalline anisotropy is sufficient for realizing sensor and memory functionalities in a tunneling device based on TAMR.
Pt/LaCoMnO/Nb:SrTiO 器件由夹在非磁电极之间的铁磁绝缘势垒组成，研究了其多种自旋功能。独特的是，LaCoMnO 薄膜具有源自磁晶各向异性的强垂直磁各向异性，这是自旋电子学的主要关注点。该结的自旋过滤效率估计为 99.7%，低温下的隧穿各向异性磁电阻（TAMR）值高达 30%。这种显著的磁电阻角度依赖性与磁各向异性有关，其起源在于 Co 的大自旋轨道相互作用，此外还受到晶格应变的调节。此外，我们发现该结可用作电可读磁存储设备。这项工作的结果表明，具有强磁晶各向异性的单个铁磁绝缘势垒足以在基于 TAMR 的隧穿器件中实现传感器和存储功能。
