Al-Bustami Hammam, Koplovitz Guy, Primc Darinka, Yochelis Shira, Capua Eyal, Porath Danny, Naaman Ron, Paltiel Yossi
Applied Physics, Hebrew University of Jerusalem, Edmond J Safra Campus, Jerusalem, 919041, Israel.
Department of Chemical and Biomolecular Engineering, University of California, Berkeley, Tan Hall 373A, Berkeley, CA, 94720, USA.
Small. 2018 Jul;14(30):e1801249. doi: 10.1002/smll.201801249. Epub 2018 Jun 27.
There is an increasing demand for the development of a simple Si-based universal memory device at the nanoscale that operates at high frequencies. Spin-electronics (spintronics) can, in principle, increase the efficiency of devices and allow them to operate at high frequencies. A primary challenge for reducing the dimensions of spintronic devices is the requirement for high spin currents. To overcome this problem, a new approach is presented that uses helical chiral molecules exhibiting spin-selective electron transport, which is called the chiral-induced spin selectivity (CISS) effect. Using the CISS effect, the active memory device is miniaturized for the first time from the micrometer scale to 30 nm in size, and this device presents memristor-like nonlinear logic operation at low voltages under ambient conditions and room temperature. A single nanoparticle, along with Au contacts and chiral molecules, is sufficient to function as a memory device. A single ferromagnetic nanoplatelet is used as a fixed hard magnet combined with Au contacts in which the gold contacts act as soft magnets due to the adsorbed chiral molecules.
对开发一种在纳米尺度下运行的简单硅基通用存储器件的需求日益增长，这种器件要能在高频下工作。自旋电子学（自旋电子技术）原则上可以提高器件效率并使其在高频下运行。减小自旋电子器件尺寸的一个主要挑战是对高自旋电流的要求。为克服这一问题，提出了一种新方法，该方法使用表现出自旋选择性电子传输的螺旋手性分子，这被称为手性诱导自旋选择性（CISS）效应。利用CISS效应，有源存储器件首次从微米尺度缩小到尺寸为30纳米，并且该器件在环境条件和室温下的低电压下呈现出类似忆阻器的非线性逻辑操作。单个纳米颗粒与金触点和手性分子一起就足以用作存储器件。单个铁磁纳米片用作固定硬磁体，与金触点结合，其中金触点由于吸附的手性分子而充当软磁体。
