Center for Physical Sciences and Technology , Vilnius LT-10257, Lithuania.
Department of Physics, Kaunas University of Technology , Kaunas LT-51368, Lithuania.
ACS Nano. 2017 Mar 28;11(3):3328-3336. doi: 10.1021/acsnano.7b00665. Epub 2017 Mar 10.
Hexagonal boron nitride (h-BN) is rapidly emerging as an attractive material for solid-state quantum engineering. Analogously to three-dimensional wide-band-gap semiconductors such as diamond, h-BN hosts isolated defects exhibiting visible fluorescence at room temperature, and the ability to position such quantum emitters within a two-dimensional material promises breakthrough advances in quantum sensing, photonics, and other quantum technologies. Critical to such applications is an understanding of the physics underlying h-BN's quantum emission. We report the creation and characterization of visible single-photon sources in suspended, single-crystal, h-BN films. With substrate interactions eliminated, we study the spectral, temporal, and spatial characteristics of the defects' optical emission. Theoretical analysis of the defects' spectra reveals similarities in vibronic coupling to h-BN phonon modes despite widely varying fluorescence wavelengths, and a statistical analysis of the polarized emission from many emitters throughout the same single-crystal flake uncovers a weak correlation between the optical dipole orientations of some defects and h-BN's primitive crystallographic axes, despite a clear misalignment for other dipoles. These measurements constrain possible defect models and, moreover, suggest that several classes of emitters can exist simultaneously throughout free-standing h-BN, whether they be different defects, different charge states of the same defect, or the result of strong local perturbations.
六方氮化硼(h-BN)作为一种用于固态量子工程的有吸引力的材料正在迅速崛起。类似于金刚石等三维宽带隙半导体,h-BN 中存在孤立的缺陷,在室温下表现出可见的荧光,并且能够在二维材料中定位这些量子发射器,这有望在量子传感、光子学和其他量子技术方面取得突破进展。这种应用的关键是理解 h-BN 量子发射的物理原理。我们报告了在悬浮单晶 h-BN 薄膜中创建和表征可见单光子源的情况。通过消除基底相互作用,我们研究了缺陷光学发射的光谱、时间和空间特性。尽管荧光波长差异很大,但对缺陷光谱的理论分析揭示了它们与 h-BN 声子模式的振子耦合存在相似性,而对同一单晶薄片中许多发射器的偏振发射进行的统计分析揭示了一些缺陷的光学偶极子取向与 h-BN 的原始晶轴之间存在弱相关性,尽管其他偶极子存在明显的不对准。这些测量结果限制了可能的缺陷模型,而且表明,在独立的 h-BN 中可以同时存在几类发射器,无论是不同的缺陷、同一缺陷的不同电荷态,还是强局域扰动的结果。