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使用化学气相沉积技术对β-Ga₂O₃纳米线进行直径调谐。

Diameter Tuning of -GaO Nanowires Using Chemical Vapor Deposition Technique.

作者信息

Kumar Mukesh, Kumar Vikram, Singh R

机构信息

Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi, 110016, India.

Nanoscale Research Facilities, Indian Institute of Technology Delhi, Hauz Khas, New Delhi, 110016, India.

出版信息

Nanoscale Res Lett. 2017 Dec;12(1):184. doi: 10.1186/s11671-017-1915-1. Epub 2017 Mar 9.

Abstract

Diameter tuning of [Formula: see text]-GaO nanowires using chemical vapor deposition technique have been investigated under various experimental conditions. Diameter of root grown [Formula: see text]-GaO nanowires having monoclinic crystal structure is tuned by varying separation distance between metal source and substrate. Effect of gas flow rate and mixer ratio on the morphology and diameter of nanowires has been studied. Nanowire diameter depends on growth temperature, and it is independent of catalyst nanoparticle size at higher growth temperature (850-900 °C) as compared to lower growth temperature (800 °C). These nanowires show changes in structural strain value with change in diameter. Band-gap of nanowires increases with decrease in the diameter.

摘要

利用化学气相沉积技术,在各种实验条件下研究了[化学式:见正文]-GaO纳米线的直径调谐。通过改变金属源与衬底之间的间距,对具有单斜晶体结构的根部生长的[化学式:见正文]-GaO纳米线的直径进行了调谐。研究了气体流速和混合比对纳米线形态和直径的影响。纳米线直径取决于生长温度,与较低生长温度(800℃)相比,在较高生长温度(850-900℃)下,它与催化剂纳米颗粒尺寸无关。这些纳米线的结构应变值随直径变化而变化。纳米线的带隙随直径减小而增大。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8a30/5344885/8dbd06ee559f/11671_2017_1915_Fig1_HTML.jpg

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