银作为催化剂对GaAs上β-GaO纳米线生长的影响。

Influence of Silver as a Catalyst on the Growth of β-GaO Nanowires on GaAs.

作者信息

Alhalaili Badriyah, Mao Howard, Dryden Daniel M, Cansizoglu Hilal, Bunk Ryan James, Vidu Ruxandra, Woodall Jerry, Islam M Saif

机构信息

Nanotechnology and Advanced Materials Program, Kuwait Institute for Scientific Research, 13109 Kuwait City, Kuwait.

Electrical and Computer Engineering, University of California at Davis, Davis, CA 95616, USA.

出版信息

Materials (Basel). 2020 Nov 26;13(23):5377. doi: 10.3390/ma13235377.

DOI:10.3390/ma13235377

PMID:33256254

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7730707/

Abstract

A simple and inexpensive thermal oxidation process was performed to synthesize gallium oxide (GaO) nanowires using Ag thin film as a catalyst at 800 °C and 1000 °C to understand the effect of the silver catalyst on the nanowire growth. The effect of doping and orientation of the substrates on the growth of GaO nanowires on single-crystal gallium arsenide (GaAs) wafers in atmosphere were investigated. A comprehensive study of the oxide film and nanowire growth was performed using various characterization techniques including XRD, SEM, EDS, focused ion beam (FIB), XPS and STEM. Based on the characterization results, we believe that Ag thin film produces Ag nanoparticles at high temperatures and enhances the reaction between oxygen and gallium, contributing to denser and longer GaO nanowires compared to those grown without silver catalyst. This process can be optimized for large-scale production of high-quality, dense, and long nanowires.

摘要

采用一种简单且成本低廉的热氧化工艺，以银薄膜为催化剂，在800℃和1000℃下合成氧化镓（GaO）纳米线，以了解银催化剂对纳米线生长的影响。研究了在大气环境中，衬底的掺杂和取向对单晶砷化镓（GaAs）晶圆上GaO纳米线生长的影响。使用包括X射线衍射（XRD）、扫描电子显微镜（SEM）、能谱仪（EDS）、聚焦离子束（FIB）、X射线光电子能谱（XPS）和扫描透射电子显微镜（STEM）在内的各种表征技术，对氧化膜和纳米线的生长进行了全面研究。基于表征结果，我们认为银薄膜在高温下会生成银纳米颗粒，并增强氧与镓之间的反应，与无银催化剂生长的纳米线相比，有助于生成更致密、更长的GaO纳米线。该工艺可针对大规模生产高质量、致密且长的纳米线进行优化。