Shih Jhih-Wun, Kuo Ka-Wei, Kuo Jui-Chao, Kuo Tsung-Yuan
Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC.
Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC.
Ultramicroscopy. 2017 Jun;177:43-52. doi: 10.1016/j.ultramic.2017.01.020. Epub 2017 Mar 1.
A quantitative approach was proposed to determine the spatial resolution of transmission electron backscatter diffraction (t-EBSD) and to understand the limits of spatial resolution of t-EBSD. In this approach, Cu bicrystals and digital image correlation were employed. The effects of accelerating voltage and specimen thickness on the spatial resolution of t-EBSD were also investigated. t-EBSD specimens with 8μm×10μm dimensions and different thicknesses were prepared using focused ion beam milling. The optimized quality of Kikuchi pattern was achieved at a working distance of 12mm and a tilting angle of 20°. The optimum depth resolution of 34.4nm was observed in the lower surface of a 100nm thick sample at 25kV. Thus, the penetration depth from the upper surface is 65.6nm. The optimum lateral and longitudinal resolutions obtained from a 100nm thick sample at 30kV are 25.2 and 43.4nm, respectively. The spatial resolution of t-EBSD can be enhanced by increasing the accelerating voltage and decreasing the sample thickness.
提出了一种定量方法来确定透射电子背散射衍射（t-EBSD）的空间分辨率，并了解t-EBSD空间分辨率的极限。在该方法中，采用了铜双晶体和数字图像相关技术。还研究了加速电压和样品厚度对t-EBSD空间分辨率的影响。使用聚焦离子束铣削制备了尺寸为8μm×10μm且厚度不同的t-EBSD样品。在工作距离为12mm、倾斜角度为20°时获得了优化的菊池花样质量。在25kV下，在100nm厚样品的下表面观察到最佳深度分辨率为34.4nm。因此，从上表面的穿透深度为65.6nm。在30kV下，从100nm厚样品获得的最佳横向和纵向分辨率分别为25.2nm和43.4nm。可以通过增加加速电压和减小样品厚度来提高t-EBSD的空间分辨率。
