State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, P. R. China.
Department of Physics, University of York, Heslington, York, YO10 5DD, UK.
Adv Mater. 2017 Apr;29(14). doi: 10.1002/adma.201606434. Epub 2017 Mar 10.
Two-dimensional layered graphene-like crystals including transition-metal dichalcogenides (TMDs) have received extensive research interest due to their diverse electronic, valleytronic, and chemical properties, with the corresponding optoelectronics and catalysis application being actively explored. However, the recent surge in two-dimensional materials science is accompanied by equally great challenges, such as defect engineering in large-scale sample synthesis. It is necessary to elucidate the effect of structural defects on the electronic properties in order to develop an application-specific strategy for defect engineering. Here, two aspects of the existing knowledge of native defects in two-dimensional crystals are reviewed. One is the point defects emerging in graphene and hexagonal boron nitride, as probed by atomically resolved electron microscopy, and their local electronic properties, as measured by single-atom electron energy-loss spectroscopy. The other will focus on the point defects in TMDs and their influence on the electronic structure, photoluminescence, and electric transport properties. This review of atomic defects in two-dimensional materials will offer a clear picture of the defect physics involved to demonstrate the local modulation of the electronic properties and possible benefits in potential applications in magnetism and catalysis.
二维层状类似石墨烯晶体包括过渡金属二卤化物(TMDs),由于其具有多样的电子、谷电子和化学性质,相应的光电和催化应用也正在积极探索,因此受到了广泛的研究关注。然而,二维材料科学的近期兴起也伴随着同样巨大的挑战,例如在大规模样品合成中的缺陷工程。为了制定针对缺陷工程的特定应用策略,有必要阐明结构缺陷对电子性质的影响。在这里,回顾了二维晶体中本征缺陷的两个方面。一方面是原子分辨电子显微镜探测到的石墨烯和六方氮化硼中出现的点缺陷,以及通过单原子电子能量损失谱测量的它们的局部电子性质。另一方面将集中讨论 TMDs 中的点缺陷及其对电子结构、光致发光和电输运性质的影响。对二维材料中原子缺陷的综述将提供一幅清晰的缺陷物理图像,以展示电子性质的局部调制,并在磁学和催化等潜在应用中展示可能的益处。