Li Leilei, Liu Yang, Teng Jiao, Long Shibing, Guo Qixun, Zhang Meiyun, Wu Yu, Yu Guanghua, Liu Qi, Lv Hangbing, Liu Ming
Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing, 100083, China.
Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.
Nanoscale Res Lett. 2017 Dec;12(1):210. doi: 10.1186/s11671-017-1983-2. Epub 2017 Mar 22.
Conductive bridge random access memory (CBRAM) has been extensively studied as a next-generation non-volatile memory. The conductive filament (CF) shows rich physical effects such as conductance quantization and magnetic effect. But so far, the study of filaments is not very sufficient. In this work, Co/HfO/Pt CBRAM device with magnetic CF was designed and fabricated. By electrical manipulation with a partial-RESET method, we controlled the size of ferromagnetic metal filament. The resistance-temperature characteristics of the ON-state after various partial-RESET behaviors have been studied. Using two kinds of magnetic measurement methods, we measured the anisotropic magnetoresistance (AMR) of the CF at different temperatures to reflect the magnetic structure characteristics. By rotating the direction of the magnetic field and by sweeping the magnitude, we obtained the spatial direction as well as the easy-axis of the CF. The results indicate that the easy-axis of the CF is along the direction perpendicular to the top electrode plane. The maximum magnetoresistance was found to appear when the angle between the direction of magnetic field and that of the electric current in the CF is about 30°, and this angle varies slightly with temperature, indicating that the current is tilted.
导电桥随机存取存储器（CBRAM）作为下一代非易失性存储器已得到广泛研究。导电细丝（CF）表现出丰富的物理效应，如电导量子化和磁效应。但到目前为止，对细丝的研究还不够充分。在这项工作中，设计并制造了具有磁性CF的Co/HfO/Pt CBRAM器件。通过采用部分复位方法进行电操作，我们控制了铁磁金属细丝的尺寸。研究了各种部分复位行为后导通状态的电阻 - 温度特性。使用两种磁测量方法，我们测量了不同温度下CF的各向异性磁电阻（AMR），以反映磁结构特性。通过旋转磁场方向并扫描其大小，我们获得了CF的空间方向以及易轴。结果表明，CF的易轴沿垂直于顶部电极平面的方向。当磁场方向与CF中电流方向之间的夹角约为30°时，发现磁电阻最大，并且该角度随温度略有变化，表明电流发生了倾斜。
