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具有垂直磁各向异性的超薄[CoFeB (t)/Pd]薄膜的动力学行为。

Dynamical behaviour of ultrathin [CoFeB (t)/Pd] films with perpendicular magnetic anisotropy.

作者信息

Silva Ana S, Sá Simão P, Bunyaev Sergey A, Garcia Carlos, Sola Iñigo J, Kakazei Gleb N, Crespo Helder, Navas David

机构信息

Departamento de Fisica e Astronomia, Faculdade de Ciências, Institute of Physics for Advanced Materials, Nanotechnology and Photonics (IFIMUP), Universidade do Porto, 4169-007, Porto, Portugal.

Departamento de Física y Centro Científico Tecnológico de Valparaíso-CCTVal, Universidad Técnica Federico Santa María, 2390123, Valparaíso, Chile.

出版信息

Sci Rep. 2021 Jan 8;11(1):43. doi: 10.1038/s41598-020-79632-0.

DOI:10.1038/s41598-020-79632-0
PMID:33420134
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7794473/
Abstract

CoFeB-based ultrathin films with perpendicular magnetic anisotropy are promising for different emerging technological applications such as nonvolatile memories with low power consumption and high-speed performance. In this work, the dynamical properties of [CoFeB (t)/Pd (10 Å)] multilayered ultrathin films (1 Å ≤ t ≤ 5 Å) are studied by using two complementary methods: time-resolved magneto-optical Kerr effect and broadband ferromagnetic resonance. The perpendicular magnetization is confirmed for multilayers with t ≤ 4 Å. The effective perpendicular magnetic anisotropy reaches a clear maximum at t = 3 Å. Further increase of CoFeB layer thickness reduces the perpendicular magnetic anisotropy and the magnetization became in-plane oriented for t ≥ 5 Å. This behaviour is explained by considering competing contributions from surface and magnetoelastic anisotropies. It was also found that the effective damping parameter α decreases with CoFeB layer thickness and for t = 4 Å reaches a value of ~ 0.019 that is suitable for microwave applications.

摘要

具有垂直磁各向异性的基于钴铁硼的超薄膜在不同的新兴技术应用中具有潜力，如低功耗和高速性能的非易失性存储器。在这项工作中，通过使用两种互补方法：时间分辨磁光克尔效应和宽带铁磁共振，研究了[钴铁硼（t）/钯（10埃）]多层超薄膜（1埃≤t≤5埃）的动力学特性。对于t≤4埃的多层膜，垂直磁化得到证实。有效垂直磁各向异性在t = 3埃时达到明显的最大值。钴铁硼层厚度的进一步增加会降低垂直磁各向异性，并且对于t≥5埃，磁化变为面内取向。这种行为通过考虑表面和磁弹性各向异性的竞争贡献来解释。还发现有效阻尼参数α随钴铁硼层厚度减小，并且对于t = 4埃达到约0.019的值，这适用于微波应用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8dc5/7794473/280a54a1576b/41598_2020_79632_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8dc5/7794473/53f5620887fb/41598_2020_79632_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8dc5/7794473/01599b97da0a/41598_2020_79632_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8dc5/7794473/41c699f85b72/41598_2020_79632_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8dc5/7794473/623539cfed43/41598_2020_79632_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8dc5/7794473/2cec732d9e6e/41598_2020_79632_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8dc5/7794473/280a54a1576b/41598_2020_79632_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8dc5/7794473/53f5620887fb/41598_2020_79632_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8dc5/7794473/01599b97da0a/41598_2020_79632_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8dc5/7794473/41c699f85b72/41598_2020_79632_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8dc5/7794473/623539cfed43/41598_2020_79632_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8dc5/7794473/2cec732d9e6e/41598_2020_79632_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8dc5/7794473/280a54a1576b/41598_2020_79632_Fig6_HTML.jpg

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