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超声喷涂胶体量子点墨水太阳能电池。

Supersonically Spray-Coated Colloidal Quantum Dot Ink Solar Cells.

作者信息

Choi Hyekyoung, Lee Jong-Gun, Mai Xuan Dung, Beard Matthew C, Yoon Sam S, Jeong Sohee

机构信息

Nano-Mechanical Systems Research Division, Korea institute of Machinery and Materials (KIMM), Daejeon, 34103, Korea.

Korea University of Science and Technology (UST), Daejeon, 34113, Korea.

出版信息

Sci Rep. 2017 Apr 4;7(1):622. doi: 10.1038/s41598-017-00669-9.

Abstract

Controlling the thickness of quantum dot (QD) films is difficult using existing film formation techniques, which employ pre-ligand-exchanged PbS QD inks, because of several issues: 1) poor colloidal stability, 2) use of high-boiling-point solvents for QD dispersion, and 3) limitations associated with one-step deposition. Herein, we suggest a new protocol for QD film deposition using electrical double-layered PbS QD inks, prepared by solution-phase ligand exchange using methyl ammonium lead iodide (MAPbI). The films are deposited by the supersonic spraying technique, which facilitates the rapid evaporation of the solvent and the subsequent deposition of the PbS QD ink without requiring a post-deposition annealing treatment for solvent removal. The film thickness could be readily controlled by varying the number of spraying sweeps made across the substrate. This spray deposition process yields high-quality n-type QD films quickly (within 1 min) while minimizing the amount of the PbS QD ink used to less than 5 mg for one device (300-nm-thick absorbing layer, 2.5 × 2.5 cm). Further, the formation of an additional p-layer by treatment with mercaptopropionic acid allows for facile hole extraction from the QD films, resulting in a power conversion efficiency of 3.7% under 1.5 AM illumination.

摘要

使用现有的成膜技术来控制量子点(QD)薄膜的厚度是困难的,这些技术采用预配体交换的PbS量子点墨水,原因有几个:1)胶体稳定性差,2)使用高沸点溶剂来分散量子点,以及3)与一步沉积相关的局限性。在此,我们提出了一种使用双电层PbS量子点墨水进行量子点薄膜沉积的新方案,该墨水通过使用甲基碘化铅(MAPbI)进行溶液相配体交换制备。薄膜通过超音速喷涂技术沉积,这有助于溶剂的快速蒸发以及随后PbS量子点墨水的沉积,而无需进行用于去除溶剂的沉积后退火处理。通过改变在基板上进行的喷涂扫描次数,可以很容易地控制薄膜厚度。这种喷涂沉积过程能够快速(在1分钟内)制备高质量的n型量子点薄膜,同时将用于一个器件(300纳米厚的吸收层,2.5×2.5厘米)的PbS量子点墨水用量最小化至小于5毫克。此外,通过用巯基丙酸处理形成额外的p层,可以方便地从量子点薄膜中提取空穴,在1.5 AM光照下实现3.7%的功率转换效率。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ace8/5428848/ed16e796f0d3/41598_2017_669_Fig1_HTML.jpg

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