Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) , Campus UAB, Bellaterra, E-08193 Barcelona, Spain.
Departament de Física, Universitat Autònoma de Barcelona , Bellaterra, E-08193 Barcelona, Spain.
ACS Appl Mater Interfaces. 2017 May 10;9(18):15577-15582. doi: 10.1021/acsami.7b00476. Epub 2017 May 1.
Steady or dynamic magnetoelectric response, selectable and adjustable by only varying the amplitude of the applied electric field, is found in a multiferroic FeRh/PMN-PT device. In-operando time-dependent structural, ferroelectric, and magnetoelectric characterizations provide evidence that, as in magnetic shape memory martensitic alloys, the observed distinctive magnetoelectric responses are related to the time-dependent relative abundance of antiferromagnetic-ferromagnetic phases in FeRh, unbalanced by voltage-controlled strain. This flexible magnetoelectric response can be exploited not only for energy-efficient memory operations but also in other applications, where multilevel and/or transient responses are required.
在多铁性 FeRh/PMN-PT 器件中发现了稳定或动态的磁电响应，通过仅改变施加电场的幅度即可进行选择和调节。在操作过程中进行的时间相关结构、铁电和磁电特性表征提供了证据，表明与磁形状记忆马氏体合金中一样，观察到的独特磁电响应与 FeRh 中反铁磁-铁磁相的时间相关相对丰度有关，这是由电压控制的应变所不平衡的。这种灵活的磁电响应不仅可用于节能的存储操作，而且还可用于其他需要多级和/或瞬态响应的应用中。
