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通过氟掺杂调控单层硅烷的电子性质:第一性原理研究

Tunable electronic properties of monolayer silicane via fluorine doping: a first-principles study.

作者信息

Wang Jing, Duan Xiangmei

机构信息

Faculty of Science, Department of Physics, Ningbo University, 315211 Ningbo, People's Republic of China.

出版信息

J Phys Condens Matter. 2017 Jul 5;29(26):265501. doi: 10.1088/1361-648X/aa7021. Epub 2017 Apr 28.

DOI:10.1088/1361-648X/aa7021
PMID:28452740
Abstract

The electronic structures of fluorine-doped monolayer silicane (F-silicane) are investigated using the density functional theory. We find that the concentration of fluorine has an effect on the electronic properties such as surface work function and energy band structure. The band gap of F-silicane decreases monotonously as the covering percentage of F increases. With favorable formation energy, moderate band gap and appropriate work function, 50% F doped silicane is expected to be a potential candidate for water splitting reaction.

摘要

采用密度泛函理论研究了氟掺杂单层硅烷(F-硅烷)的电子结构。我们发现氟的浓度对诸如表面功函数和能带结构等电子性质有影响。随着F覆盖百分比的增加,F-硅烷的带隙单调减小。由于具有良好的形成能、适中的带隙和合适的功函数,预计50%F掺杂的硅烷是水分解反应的潜在候选材料。

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